IDT70825L

NOTES:         
   1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device.  This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not
implied.  Exposure to absolute maximum rating conditions for extended periods may affect reliability.

   2. VTERM must not  exceed Vcc + 0.5V for more than 25% of the cycle time or 10ns maximum, and is limited to  <  20mA for the period of VTERM  >   Vcc+ 0.5V.

The IDT70825L is a high-speed 8K x 16-bit Sequential Access Random Access Memory (SARAM). The SARAM offers a single-chip solution to buffer data sequentially on one port, and be accessed randomly (asynchronously) through he other port. The device has a Dual-Port RAM based architecture with a standard SRAM interface for the random asynchronous) access port, and a clocked interface with counter sequencing for the sequential (synchronous) access port.

Fabricated using CMOS high-performance technology, his memory device typically operates on less than 900mW of power at maximum high-speed clock-to-data and Random Access. An automatic power down feature, controlled by CE, permits the on-chip circuitry of each port to enter a very low
standby power mode.

The IDT70825L is packaged in a 80-pin Thin Plastic  Quad Flatpack (TQFP) or 84-pin Ceramic Pin Grid Array (PGA). Military grade product is manufactured in compliance with the atest revision of MIL-STD-883, Class B, making it ideally suited to military temperature applications demanding the highest level of performance and reliability.