IDT70P258 Selling Leads, Price trend, IDT70P258 DataSheet download, circuit diagram from SeekIC.com

Features: ` True Dual-Ported memory cells which allow simultaneous reads of the same memory location` High-speed access Industrial: 55ns (max.)` Low-power operation IDT70P258/248L Active: 27mW (typ.) Standby: 3.6W (typ.)` Separate upper-byte and lower-byte control for multiplexed bus compatibilit...

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SeekIC No. : 004372072 Detail

IDT70P258: Features: ` True Dual-Ported memory cells which allow simultaneous reads of the same memory location` High-speed access Industrial: 55ns (max.)` Low-power operation IDT70P258/248L Active: 27mW (typ...

IDT70P258 Data Sheet

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Part Number:: IDT70P258
Supply Ability:: 5000

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1~5000

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Negotiable

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Upload time: 2025/12/20

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Product Details

Description

Features:

` True Dual-Ported memory cells which allow simultaneous reads of the same memory location
` High-speed access
    Industrial: 55ns (max.)
` Low-power operation
    IDT70P258/248L
     Active: 27mW (typ.)
     Standby: 3.6W (typ.)
` Separate upper-byte and lower-byte control for multiplexed bus compatibility
`IDT70P258/248 easily expands data bus width to 32 bits or
    more using the Master/Slave select when cascading more
    than one device
` Supports 3.0V, 2.5V and 1.8V I/O's
` M/S = VDD for BUSY output flag on Master
    M/S = VSS for BUSY input on Slave
` Input Read Register
` Output Drive Register
` BUSY and Interrupt Flag
` On-chip port arbitration logic
` Full on-chip hardware support of semaphore signaling between ports
` Fully asynchronous operation from either port
` LVTTL-compatible, single 1.8V (±100mV) power supply
` Available in 100 Ball 0.5mm-pitch BGA
` Industrial temperature range (-40°C to +85°C)

Specifications

Symbol	Rating	Commercial & Industrial	Unit
V_TERM⁽²⁾	Terminal Voltage with Respect to GND	-0.5 to V_DDMAX +0.3V⁽⁴⁾	V
T_BIAS⁽³⁾	Temperature Under Bias	-55 to +125	^oC
T_STG	Storage Temperature	-65 to +150	^oC
T_JN	Junction Temperature	+150	^oC
I_OUT (for V_DDQL = 3.0V)	DC Output Current	20	mA
I_OUT(for V_DDQL = 1.8V)	DC Output Current	20	mA

NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
    permanent damage to the device. This is a stress rating only and functional operation
    of the device at these or any other conditions above those indicated in the operational
    sections of this specification is not implied. Exposure to absolute maximum rating
    conditions for extended periods may affect reliability.
2. VTERM must not exceed VDD + 0.3V for more than 25% of the cycle time or 10ns
    maximum, and is limited to < 20mA for the period over V_TERM = V_DD+ 0.3V.
3. Ambient Temperature under DC Bias. No AC Conditions. Chip Deselected.
4. V_DDQLMAX + 0.3V for left port.

Description

The IDT70P258 is a very low power 8K/4K x 16 Dual-Port Static RAM. The IDT70P258 is designed to be used as a stand-alone 128/64K-bit Dual-Port SRAM or as a combination MASTER/SLAVE Dual- Port SRAM for 32-bit-or-more word systems. Using the IDT MASTER/ SLAVE Dual-Port SRAM approach in 32-bit or wider memory system applications results in full-speed, error-free operation without the need for additional discrete logic.

This IDT70P258 provides two independent ports with separate control, address, and I/O pins that permit independent, asynchronous access for reads or writes to any location in memory. An automatic power down feature controlled by CE permits the on-chip circuitry of each port to enter a very low standby power mode.

Fabricated using IDT's CMOS high-performance technology, these devices typically operate on only 27mW of power.

The IDT70P258 is packaged in a 100 ball 0.5mm- pitch Ball Grid Array. The package is a 1mm thick and designed to fit in wireless handset applications.

IDT70P258

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