Features: True Dual-Ported memory cells which allow simultaneous access of the same memory locationHigh-speed access Commercial: 15/20/25/35ns (max.)Low-power operation IDT70V08S Active: 550mW (typ.) Standby: 5mW (typ.) IDT70V08L Active: 550mW (typ.) Standby: 1mW (typ.)Dual chip enables allow f...
IDT70V08S: Features: True Dual-Ported memory cells which allow simultaneous access of the same memory locationHigh-speed access Commercial: 15/20/25/35ns (max.)Low-power operation IDT70V08S Active: 550mW (ty...
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|
Symbol |
Rating |
Commercial & Industrial |
Unit |
| VTERM(2) |
Terminal Voltage with Respect to GND |
-0.5 to +4.6 |
V |
| TBIAS | Temperature Under Bias |
-55 to +125 |
o C |
| TSTG | Storage Te mp e ra ture |
-65 to +150 |
o C |
| IOUT | DC Output Current |
50 |
mA |
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
2. VTERM must not exceed Vcc + 0.3V for more than 25% of the cycle time or 10ns maximum, and is limited to < 20mA for the period of VTERM > Vcc + 0.3V.