IDT70V657S15BC

Series: -
Operating Temperature: 0°C ~ 70°C
Format - Memory: RAM
Interface: Parallel
Packaging: Tray
Voltage - Supply: 3.15 V ~ 3.45 V
Manufacturer: IDT, Integrated Device Technology Inc
Speed: 15ns
Memory Type: SRAM - Dual Port, Asynchronous
Package / Case: 256-LBGA
Supplier Device Package: 256-CABGA (17x17)
Memory Size: 1.125M (32K x 36)


Description

The IDT70V657S15BC is a high-speed 128/64/32K x 36 AsynchronousDual-Port Static RAM. The IDT70V659/58/57 is designed to be usedas a stand-alone 4/2/1Mbit Dual-Port RAM or as a combination MASTER/SLAVE Dual-Port RAM for 72-bit-or-more word system. Using the IDTMASTER/SLAVE Dual-Port RAM approach in 72-bit or wider memorysystem applications results in full-speed, error-free operation without theneed for additional discrete logic.

The features of the IDT70V657S15BC are: (1)True Dual-Port memory cells which allow simultaneous ccess of the same memory location; (2)High-speed access; (3)Dual chip enables allow for depth expansion without external logic; (4)IDT70V659/58/57 easily expands data bus width to 36 bits or more using the Master/Slave select when cascading more than one device; (5)M/S = VIH for BUSY output flag on Master,M/S = VIL forBUSY input on Slave; (6)Busy and Interrupt Flags; (7)On-chip port arbitration logic; (8)Full on-chip hardware support of semaphore signaling between ports; (9)Fully asynchronous operation from either port; (10)Separate byte controls for multiplexed bus and bus matching compatibility.

The following is about the electrical characteristics of IDT70V657S15BC: (1)Terminal Voltage with Respect to GND: -0.5 to +4.6 V ; (2)Temperature Under Bias: 55 to +125 ; (3)Storage Temperature: 65 to +150 ; (4)Junction Temperature: +150 ; (5)DC Output Current: 50 mA ; (6)DC Output Current: 40  mA.

Parameters:

Technical/Catalog Information	IDT70V657S15BC
Vendor	IDT, Integrated Device Technology Inc
Category	Undefined Category
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IDT70V657S15BC IDT70V657S15BC