IDT70V658S10BF

Series: -
Operating Temperature: 0°C ~ 70°C
Format - Memory: RAM
Interface: Parallel
Packaging: Tray
Speed: 10ns
Voltage - Supply: 3.15 V ~ 3.45 V
Manufacturer: IDT, Integrated Device Technology Inc
Memory Type: SRAM - Dual Port, Asynchronous
Package / Case: 208-LFBGA
Supplier Device Package: 208-CABGA (15x15)
Memory Size: 2M (64K x 36)


Description

The IDT70V658S10BF is a high-speed 64K x 36 Asynchronous Dual-Port Static RAM. The IDT70V658 is designed to be used as a stand-alone 2304K-bit Dual-Port RAM or as a combination MASTER/SLAVE Dual- Port RAM for 72-bit-or-more word system. Using the IDT MASTER/ SLAVE Dual-Port RAM approach in 72-bit or wider memory system applications results in full-speed, error-free operation without the need for additional discrete logic.

The features of the IDT70V658S10BF are: (1)True Dual-Port memory cells which allow simultaneous access of the same memory location; (2)High-speed access Commercial: 10/12/15ns (max.) Industrial: 12/15ns (max.); (3)Dual chip enables allow for depth expansion without external logic; (4)IDT70V658 easily expands data bus width to 72 bits or more using the Master/Slave select when cascading more than one device; (5)M/S = VIH for BUSY output flag on Master, M/S = VIL for BUSY input on Slave; (6)Busy and Interrupt Flags; (7)On-chip port arbitration logic; (8)Full on-chip hardware support of semaphore signaling between ports; (9)Fully asynchronous operation from either port; (10)Separate byte controls for multiplexed bus and bus matching compatibility.

The following is about the electrical characteristics of IDT70V658S10BF: (1)Terminal Voltage with Respect to GND: -0.5 to +4.6 V ; (2)Temperature Under Bias: -55 to +125 oC ; (3)TSTG Storage Temperature: -65 to +150 oC ; (4)DC Output Current: 50 mA.

Parameters:

Technical/Catalog Information	IDT70V658S10BF
Vendor	IDT, Integrated Device Technology Inc
Category	Undefined Category
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IDT70V658S10BF IDT70V658S10BF