IDT71V2578S

Features: *128K x 36, 256K x 18 memory configurations*Supports high system speed: Commercial and Industrial:-150MHz 3.8ns clock access time-133MHz 4.2ns clock access time*LBOinput selects interleaved or linear burst mode*Self-timed write cycle with global write control (GW), byte write enable (BWE...

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IDT71V2578S Picture
SeekIC No. : 004372279 Detail

IDT71V2578S: Features: *128K x 36, 256K x 18 memory configurations*Supports high system speed: Commercial and Industrial:-150MHz 3.8ns clock access time-133MHz 4.2ns clock access time*LBOinput selects interleave...

floor Price/Ceiling Price

Part Number:
IDT71V2578S
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/3

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Product Details

Description



Features:

*128K x 36, 256K x 18 memory configurations
*Supports high system speed:
  Commercial and Industrial:
-150MHz    3.8ns clock access time
-133MHz    4.2ns clock access time
*LBO input selects interleaved or linear burst mode
*Self-timed write cycle with global write control (GW), byte write
  enable (BWE), and byte writes (BWx)
*3.3V core power supply
*Power down controlled by ZZ input
*2.5V I/O
*Optional - Boundary Scan JTAG Interface (IEEE 1149.1 compliant)
*Packaged in a JEDEC Standard 100-pin plastic thin quad
  flatpack (TQFP), 119 ball grid array (BGA) and 165 fine pitch ball
  grid array (fBGA)



Pinout

  Connection Diagram  Connection Diagram


Specifications

Symbol

Rating

Value

Unit

VTERM(2)

Terminal Voltage with
Respect to GND

-0.5 to +4.6

V

VTERM(3,6)

Terminal Voltage with
Respect to GND

0.5 to VDD

V

VTERM(4,6)

Terminal Voltage with
Respect to GND

-0.5 to VDD+0.5

V

VTERM(5,6)

Terminal Voltage
with Respect to GND

-0.5 to VDD+0.5

V

TA(7)

Commercial
Operating Temperature

-0 to +70

oC

Industrial
Operating Temperature

-40 to +85

TBIAS

Temperature Under Bias

-55 to +125

oC

TSTG

Storage Temperature

-55 to +125

oC

PT

Power Dissipation

2.0

W

IOUT

DC Output Current

50

mA




Description

The IDT71V2578S are high-speed SRAMs organized as 128K x 36/256K x 18. The IDT71V2578S SRAMs contain write, data, address and control registers.  Internal logic allows the SRAM to generate a self- timed write based upon a decision which can be left until the end of the write cycle.

The burst mode feature offers the highest level of performance to the system designer, as the IDT71V2576/78 can provide four cycles of data for a single address presented to the SRAM.  An internal burst address counter accepts the first cycle address from the processor, initiating the access sequence. The first cycle of output data will be pipelined for one cycle before it is available on the next rising clock edge.  If burst mode operation is selected (ADV=LOW), the subsequent three cycles of output data will be available to the user on the next three rising clock edges.  The order of these three addresses are defined by the internal burst counter and the LBO input pin.

The IDT71V2578S SRAMs utilize IDT's latest high-performance CMOS process and are packaged in a JEDEC standard 14mm x 20mm 100-pin thin plastic quad flatpack (TQFP) as well as a 119  ball grid array (BGA) and 165 fine pitch ball grid array (fBGA).




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