MFG:Other Category:Other
Category: Other
MFG: Other
Description: The IDT74ALVC04DC is built using advanced dual metal CMOS technology. The ALVC04 contains six independent inverters and p...
The IDT74ALVC04DC is built using advanced dual metal CMOS technology. The ALVC04 contains six independent inverters and performs the Boolean function Y = A. The ALVC04 has been designed with a ±24mA output driver. This driver is capable of driving a moderate to heavy load while maintaining speed performance.
The features of IDT74ALVC04DC are as follows: (1)0.5 MICRON CMOS Technology; (2)ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0); (3)VCC = 3.3V ± 0.3V, Normal Range; (4)VCC = 2.7V to 3.6V, Extended Range; (5)VCC = 2.5V ± 0.2V; (6)CMOS power levels (0.4 W typ. static); (7)Rail-to-Rail output swing for increased noise margin; (8)Available in SOIC, SSOP, and TSSOP packages.
The absolute maximum ratings of the IDT74ALVC04DC are: (1)VTERM: 0.5 to +4.6 V at VDD Terminal Voltage with Respect to GND ; (2)VTERM(2): 0.5 to VCC+0.5 V at VDDQ Terminal Voltage; (3)with Respect to GND ; (4)VTERM(2): 65 to +150 °C at Input and I/O Terminal; (5)Voltage with Respect to GND; (6)IOUT: 50 to +50 °C at DC Output Current ; (7)TSTG: -65 to +150 mA at Continuous Clamp Current, VI < 0 or VI > VCC ; (8)TJN: + 150 mA at Junction Temperature ; (9)IOK: 50mA at Continuous Clamp Current, VO < 0 ; (10)ISS: 40 mA at Continuous Current through VCC or GND.
IDT74ALVC04DC
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This hex inverter of the IDT74ALVC04is built using advanced dual metal CMOS technology. The ALVC04 contains six independent inverters and performs the Boolean function Y = A. The IDT74ALVC04 has been designed with a ±24mA output driver. This driver is capabl...
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