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Description: The FCT163543 16-bit latched transceivers are built using advanced dual metal CMOS technology. These h...


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IDT74FCT163543C General Description


The FCT163543 16-bit latched transceivers are built using advanced dual metal CMOS technology. These high-speed, low-power devices are organized as two independent 8-bit D-type latched transceivers with separate input and output control to permit independent control of data flow in either direction. For example, the A-to-B Enable (xCEAB) must be low in order to enter data from the A port or to output data from the B port. xLEAB controls the latch function. When xLEAB is low, the latches are transparent. A subsequent low-to-high transition of xLEAB signal puts the A latches in the storage mode. xOEAB performs output enable function on the B port. Data flow from the B port to the A port is similar but requires using xCEBA, xLEBA, and xOEBA inputs. Flow-through organization of signal pins simplifies layout. All inputs are designed with hysteresis for improved noise margin.

The FCT163543 have series current limiting resistors. These offer low ground bounce, minimal undershoot, and controlled output fall times reducing the need for external series terminating resistors.

IDT74FCT163543C Maximum Ratings

Symbol

Description
Max
Unit
VTERM(2)
Terminal Voltage with Respect to GND
0.5 to +4.6
V
VTERM(3)
Terminal Voltage with Respect to GND
0.5 to +7
V
VTERM(4)
Terminal Voltage with Respect to GND
0.5 to VCC+0.5
V
TSTG
Storage Temperature
65 to +150
°C

IOUT

DC Output Current
60 to +60
mA

NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
2. Vcc terminals.
3. Input terminals.
4. Outputs and I/O terminals.

IDT74FCT163543C Features

• 0.5 MICRON CMOS Technology
• Typical tSK(o) (Output Skew) < 250ps
• ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0)
• VCC = 3.3V ± 0.3V, Normal Range, or VCC = 2.7V to 3.6V, Extended Range
• CMOS power levels (0.4 W typ. static)
• Rail-to-rail output swing for increased noise margin
• Low Ground Bounce (0.3V typ.)
• Inputs (except I/O) can be driven by 3.3V or 5V components
• Available in SSOP and TSSOP packages

IDT74FCT163543C Connection Diagram

IDT74FCT163543C  Connection Diagram

IDT74FCT163543C datasheet

IDT74FCT163543C
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