Features: `Advanced Process Technology`Ultra Low On-Resistance`P Channel MOSFET`Surface Mount`Available in Tape & Reel`150 Operating Temperature`Automotive [Q101] Qualified`Lead-FreeSpecifications Symbol Parameter Value Units ID @ Ta = 25 Continuous Drain Current -1...
IER7416QPBF: Features: `Advanced Process Technology`Ultra Low On-Resistance`P Channel MOSFET`Surface Mount`Available in Tape & Reel`150 Operating Temperature`Automotive [Q101] Qualified`Lead-FreeSpecificatio...
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|
Symbol |
Parameter |
Value |
Units |
|
ID @ Ta = 25 |
Continuous Drain Current |
-10 |
A |
|
ID @ Ta =70 |
Continuous Drain Current |
-7.1 | |
|
IDM |
Pulsed Drain Current |
-45 | |
|
PD @ Ta = 25 |
Max. Power Dissipation |
2.5 |
W |
|
Linear Derating actor |
0.02 |
W/ | |
|
VGS |
Gate-to-Source Voltage |
±20 |
V |
|
EAS |
Single Pulse Avalanche Energy |
370 |
mJ |
|
dV/dt |
Peak Diode Recovery dv/dt |
-5.0 |
V/ns |
|
TJ |
Operating Junction |
-55 to 200 |
|
|
TSTG |
Storage Temperature Range |
Specifically designed for Automotive applications, these HEXFET® Power MOSFET's in package utilize the lastest processing techniques to achieve extremely low onresistance per silicon area. Additional features of these Automotive qualified HEXFET IER7416QPBF Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits of IER7416QPBF combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. The efficient SO-8 package of IER7416QPBF provides enhanced thermal characteristics making it ideal in a variety of power applications. This surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel.