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IFD-53110

Features: • Wide Operating Frequency Range: IFD-53010: 0.15 to 5.5 GHz IFD-53110: 0.15 to 3.5 GHz• Low Phase Noise:-143 dBc/Hz @ 1 kHz Offset• Output Power: -5 dBm Typ.• Single Supply Voltage Vcc = 5 V or Vee = -5 V• On-Chip Terminations Provide Good Input and Output ...

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SeekIC No. : 004373612 Detail

IFD-53110: Features: • Wide Operating Frequency Range: IFD-53010: 0.15 to 5.5 GHz IFD-53110: 0.15 to 3.5 GHz• Low Phase Noise:-143 dBc/Hz @ 1 kHz Offset• Output Power: -5 dBm Typ.• Sing...

IFD-53110 Data Sheet

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Part Number:
IFD-53110
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Wide Operating Frequency Range: IFD-53010: 0.15 to 5.5 GHz IFD-53110: 0.15 to 3.5 GHz
• Low Phase Noise:
-143 dBc/Hz @ 1 kHz Offset
• Output Power: -5 dBm Typ.
• Single Supply Voltage Vcc = 5 V or Vee = -5 V
• On-Chip Terminations Provide Good Input and Output VSWRs
• Hermetic Gold-Ceramic Surface Mount Package


Pinout

Connection Diagram


Specifications

Symbol Parameter Units Absolute Maximum[1]
Vcc - Vee Device Voltage V 8
Pdiss Power Dissipation[2,3] mW 650
Pin RF Input Power dBm +15
Tj Junction Temperature °C 200
TSTG Storage Temperature °C -65 to +200



Description

Hewlett-Packard's IFD-53010 and IFD-53110 are low phase noise silicon bipolar static digital frequency dividers using two scaled Emitter-Coupled-Logic (ECL) master-slave D flip-flops and buffer amplifiers. They are housed in hermetic high reliability surface mount packages suitable for commercial, industrial, and military applications. Typical applications include stabilized or digitally controlled local oscillators for GPS, SATCOM or military receivers, and frequency synthesizers and counters in instrumentation systems.

The IFD-53110 is a lower cost selected version of the IFD-53010, and is distinguished by a reduced operating frequency range.

The IFD series of frequency dividers is fabricated using Hewlett-Packard's 18 GHz, ft, ISOSAT™-2 silicon bipolar process which uses nitride selfalignment, submicrometer lithography, trench isolation, ionimplantation, gold metallization and polyimide intermetal dielectric and scratch protection to achieve excellent device uniformity, performance, and reliability.




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