IGBT Transistors LOW LOSS IGBT TECH 600V 15A
IGB15N60T: IGBT Transistors LOW LOSS IGBT TECH 600V 15A
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Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 600 V | ||
Maximum Gate Emitter Voltage : | +/- 20 V | Maximum Operating Temperature : | + 150 C | ||
Package / Case : | TO-263-3 | Packaging : | Reel |
Parameter | Symbol | Value | Unit |
Collector-emitter voltage | VCE | 600 | V |
Triangular collector peak current (VGS = 15V) TC = 100°C, f = 32kHz |
ICpk | 30 15 |
A |
Pulsed collector current, tp limited by Tjmax | ICpuls | 45 | |
Turn off safe operating area VCE 1200V, Tj 150°C |
- | 45 | |
Gate-emitter voltage | VGE | ±20 | V |
Short circuit withstand time1) VGE = 15V, VCC 400V, Tj 150°C |
tSC | 5 | µs |
Power dissipation TC = 25°C |
Ptot | 130 | W |
Operating and storage temperature | Tj , | -40...+175 | °C |
Tstg | -55...+175 | ||
Soldering temperature 1.6mm(0.063 in.) from case for 10s |
- | 260 |
°C |