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IGB15N60T

IGBT Transistors LOW LOSS IGBT TECH 600V 15A

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SeekIC No. : 00143335 Detail

IGB15N60T: IGBT Transistors LOW LOSS IGBT TECH 600V 15A

IGB15N60T Data Sheet

floor Price/Ceiling Price

US $ .8~.92 / Piece | Get Latest Price
Part Number:
IGB15N60T
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~450
  • 450~900
  • 900~1000
  • Unit Price
  • $.92
  • $.8
  • $.8
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2025/12/5

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 600 V
Maximum Gate Emitter Voltage : +/- 20 V Maximum Operating Temperature : + 150 C
Package / Case : TO-263-3 Packaging : Reel    

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Configuration : Single
Packaging : Reel
Maximum Gate Emitter Voltage : +/- 20 V
Package / Case : TO-263-3


Pinout

Connection Diagram


Specifications

Parameter Symbol Value Unit
Collector-emitter voltage VCE 600 V
Triangular collector peak current (VGS = 15V)
TC = 100°C, f = 32kHz		 ICpk 30
15		 A
Pulsed collector current, tp limited by Tjmax ICpuls 45
Turn off safe operating area
VCE 1200V, Tj 150°C		 - 45
Gate-emitter voltage VGE ±20 V
Short circuit withstand time1)
VGE = 15V, VCC 400V, Tj 150°C		 tSC 5  µs
Power dissipation
TC = 25°C		 Ptot 130 W
Operating and storage temperature Tj , -40...+175 °C
  Tstg -55...+175  
Soldering temperature
1.6mm(0.063 in.) from case for 10s		 - 260
°C



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