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IGW60T120

IGBT Transistors LOW LOSS IGBT TECH 1200V 60A

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SeekIC No. : 00143235 Detail

IGW60T120: IGBT Transistors LOW LOSS IGBT TECH 1200V 60A

IGW60T120 Data Sheet

floor Price/Ceiling Price

US $ 3.36~4.6 / Piece | Get Latest Price
Part Number:
IGW60T120
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~130
  • 130~250
  • 250~500
  • 500~1000
  • Unit Price
  • $4.6
  • $4.24
  • $3.86
  • $3.36
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 1200 V
Maximum Gate Emitter Voltage : +/- 20 V Maximum Operating Temperature : + 150 C
Package / Case : TO-247-3 Packaging : Tube    

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector- Emitter Voltage VCEO Max : 1200 V
Package / Case : TO-247-3


Pinout

Connection Diagram


Specifications

Parameter Symbol Value Unit
Collector-emitter voltage VCE 1200 V
Triangular collector peak current (VGS = 15V)
TC = 100°C, f = 32kHz		 IC 100
60		 A
Pulsed collector current, tp limited by Tjmax ICpuls 150
Turn off safe operating area
VCE 1200V, Tj 150°C		 - 150
Gate-emitter voltage VGE ±20 V
Short circuit withstand time1)
VGE = 15V, VCC 1200V, Tj 150°C 		tSC 10 µs
Power dissipation
TC = 25°C		 Ptot 270 W
Operating Tj -40...+150 °C
Storage temperature Tstg -55...+150  
Soldering temperature
1.6mm(0.063 in.) from case for 10s		 - 260 °C



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