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MFG:TO247  Package Cooled:7850  D/C:INFINEON  

IHW30N120R Product Image

IHW Series Datasheet download

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Part Number: IHW30N120R

 

MFG: TO247

Package Cooled: 7850

D/C: INFINEON

 

Urgent Purchase

IHW30N120R Maximum Ratings

Parameter
Symbol
Value
Unit
Collector-emitter voltage
VCE
1200
V
DC collector current
TC = 25
TC = 100
IC
60
30
A
Pulsed collector current, tp limited by Tjmax
ICpuls
90
Turn off safe operating area (VCE 1200V, Tj 175)
90
Diode forward current
TC = 25
TC = 100
IF
50
25
Diode pulsed current, tp limited by Tjmax
IFpuls
75
Diode surge non repetitive current, tp limited by Tjmax
TC = 25, tp = 10ms, sine halfwave
TC = 25, tp 2.5µs, sine halfwave
TC = 100, tp 2.5µs, sine halfwave
IFSM
50
130
120
Gate-emitter voltage
Transient Gate-emitter voltage (tp < 5 ms)
VGE
±20
±25
V
Power dissipation TC = 25
Ptot
395
W
Operating junction temperature
Tj
-40...+175
Storage temperature
Tstg
-55...+175
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
260

IHW30N120R Features

• Powerful monolithic Body Diode
• Specified for TJmax = 175
• Trench and Fieldstop technology for 1200 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
• NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat)
• Low EMI
• Qualified according to JEDEC1 for target applications
• Pb-free lead plating; RoHS compliant

IHW30N120R Typical Application

• Inductive Cooking
• Soft Switching Applications

IHW30N120R datasheet

IHW15N120R2
PDF/DataSheet Download

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