IHW40N60T

Gate-Emitter Leakage Current :
Collector- Emitter Voltage VCEO Max : 600 V
Continuous Collector Current at 25 C : 40 A
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector-Emitter Saturation Voltage : 1.5 V
Package / Case : TO-247-3
Power Dissipation : 303 W


Features:

• Very low V_CE(sat) 1.5 V (typ.)
• Maximum Junction Temperature 175
• Short circuit withstand time -5s
• TrenchStop^® and Fieldstop technology for 600 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- low V_CE(sat)
• Positive temperature coefficient in V_CE(sat)
• Low EMI
• Low Gate Charge
• Qualified according to JEDEC¹ for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/


Application

• Inductive Cooking
• Soft Switching Applications


Specifications

Parameter	Symbol	Value	Unit
Collector-emitter voltage	VCE	600	V
DC collector current, limited by Tjmax TC = 25 TC = 100	IC	80 40	A
Pulsed collector current, tp limited by Tjmax	ICpuls	120
Turn off safe operating area (VCE 600V, Tj 175)	-	120
Diode forward current, limited by Tjmax TC = 25 TC = 100	IF	40 20
Diode pulsed current, tp limited by Tjmax	IFpuls	60
Gate-emitter voltage Transient Gate-emitter voltage (tp < 5 ms)	VGE	±20 ±25	V
Short circuit withstand time2) VGE = 15V, VCC 400V, Tj 150	tsC	5	s
Power dissipation, TC = 25	Ptot	303	W
Operating junction temperature	TJ	-40...+175
Storage temperature	Tstg	-55...+175
Soldering temperature, 1.6mm (0.063 in.) from case for 10s	-	260

1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.