IL352

Transistor Output Optocouplers Phototransistor Out Single CTR >100%

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IL352 Picture
SeekIC No. : 00101949 Detail

IL352: Transistor Output Optocouplers Phototransistor Out Single CTR >100%

floor Price/Ceiling Price

Part Number:
IL352
Mfg:
Vishay Semiconductors
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/4/18

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Product Details

Quick Details

Input Type : DC Maximum Collector Emitter Voltage : 70 V
Maximum Collector Emitter Saturation Voltage : 0.3 V Isolation Voltage : 3000 Vrms
Maximum Forward Diode Voltage : 1.5 V Maximum Collector Current : 100 mA
Maximum Power Dissipation : 50 mW Maximum Operating Temperature : + 85 C
Minimum Operating Temperature : - 40 C Package / Case : SOP-7
Packaging : Reel    

Description

Current Transfer Ratio :
Packaging : Reel
Maximum Forward Diode Voltage : 1.5 V
Minimum Operating Temperature : - 40 C
Maximum Collector Emitter Saturation Voltage : 0.3 V
Maximum Operating Temperature : + 85 C
Input Type : DC
Maximum Collector Emitter Voltage : 70 V
Maximum Collector Current : 100 mA
Isolation Voltage : 3000 Vrms
Maximum Power Dissipation : 50 mW
Package / Case : SOP-7


Features:

• Good CTR Linearly Depending on Forward Current
• Isolation Test Voltage, 3000 VRMS
• High Collector-Emitter Voltage, VCEO = 30 V
• Low Saturation Voltage
• Fast Switching Times
• Lead-free component
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC





Application

• UL1577, File No. E52744 System Code S
• DIN EN 60747-5-2 (VDE0884) DIN EN 60747-5-5 pending Available with Option 1





Pinout

  Connection Diagram




Specifications

Parameter Test condition Symbol Value Unit
Reverse voltage VR 6.0 V
DC forward current IF 60 mA
Total power dissipation Pdiss 50 mW
Derate linearly from 25 °C 0.66 mW/°C





Description

The IL352 optically coupled isolator that features a high current transfer ratio, low coupling capacitance and high isolation voltage. It has a GaAs infrared emitting diode emitter, which is optically coupled to a silicon planar phototransistor detector. The component is housed in a thin line package.






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