Purchase ILB03N60, In-stock ILB03N60 From SeekIC.
MFG:INFINEON D/C:09+
- Table of contents:
ILB03N60
-
Suppliers
DataSheet
General Description
ILB03N60 Maximum Ratings
| Parameter |
Symbol |
Value |
Unit | ||
|
ILA03N60 |
Others | ||||
| Collector-emitter voltage |
VCE |
600 |
V | ||
| DC collector current | TC = 25 TC = 100 |
IC |
3 2.2 |
4.5 3 |
A |
| Pulsed collector current, tp limited by Tjmax, tp < 10 ms |
ICpuls |
9 | |||
| Pulsed collector current, tp limited by Tjmax |
5.5 | ||||
| Diode forward current | TC = 25 TC = 100 |
IF |
4 2.2 |
4 2.5 | |
| Diode pulsed current, tp limited by Tjmax, tp < 10 ms |
IFpuls |
9 | |||
| Diode pulsed current, tp limited by Tjmax |
5.5 | ||||
| Avalanche energy, single pulse IC=0.4A, VCE=50V |
EAS |
0.32 |
mJ | ||
| Gate-emitter voltage |
VGE |
±30 |
V | ||
| Reverse diode dv/dt IC 3A, VCE 450V, Tjmax 150 |
dv/dt |
11 |
V/ns | ||
| Power dissipation (TC = 25) |
Ptot |
16.5 |
27 |
W | |
| Operating junction and storage temperature |
Tstg |
-55...+150 |
|||
| Soldering temperature for 10 s (according to JEDEC J-STA-020A) |
Ts |
D-Pak 255 Others 220 | |||
ILB03N60 Features
• New high voltage technology designed for ZVS-switching in lamp ballasts
• IGBT with integrated reverse diode
• 4A current rating for reverse diode
• Up to 10 times lower gate capacitance than MOSFET
• Avalanche rated
• 150°C operating temperature
• FullPak isolates 2.5 kV AC (1 min.)
• IGBT with integrated reverse diode
• 4A current rating for reverse diode
• Up to 10 times lower gate capacitance than MOSFET
• Avalanche rated
• 150°C operating temperature
• FullPak isolates 2.5 kV AC (1 min.)
ILB03N60
PDF/DataSheet Download
- Datasheet: ILB03N60
- File Size: 338720 KB
- Manufacturer: INFINEON [Infineon Technologies AG]
- Click here to Download
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