ILC-3F-2.14G

      The ILC-3F-2.14G has the following features including 2.04 - 2.24 GHz;LOW LOSS;LOW VSWR;HIGH ISOLATION;SURFACE MOUNT.
      The Multi-Mix® ILC-F ILC-3F-2.14G series provides a power divider and combiner function with low insertion loss, high isolation, and high power handling in a small outline. The ILC series are composed of serial connected multi-couplers with each coupler having a different nominal coupling value. Equal split loss is maintained at all of the coupled ports, since the direct-path loss of previous couplers is added. Each of the paths of ILC-3F-2.14G through a divider / combiner pair have equal insertion phase, but the individual port paths do not. Accurate phase and amplitude balance make ILC-3F-2.14G ideal for applications involving power amplifiers, signal distribution and processing.ILC-F in-line couplers are fusion bonded multilayer stripline assemblies. The fusion bonding process of ILC-3F-2.14G yields a homogeneous monolithic dielectric structure with reliability, ruggedness, and electrical performance that is superior to conventional adhesive bonding techniques.The ILC-F series is an easy to install SMD designed specifically for the full spectrum of wireless applications. The high stability ceramic filled PTFE dielectrics utilized in these components are compatible with common substrates such as FR-4, G-10, and polyamide. The wrap around ground plane of ILC-3F-2.14G provides excellent EM shielding.
      Additional benefits of ILC-3F-2.14G include:Cost effective for commercial wireless applications;Operating temperature range 55°C to +85°C;Can be integrated with other Multi-Mix® components in a multi-function.The product family has passed environmental screening including Thermal shock, Burn-in,Acceleration, Vibration, Mechanical Shock, Moisture Resistance, Resistance to Solder Heat, and Thermal Cycling Life Test (>1000 cycles).Multi-Mix® is a manufacturing process based on fluoropolymer composite substrates that are fusion bonded together into a multilayer structure. The fusion bonding process yields a homogeneous monolithic structure with superior performance at microwave and millimeter wave frequencies. The bonded layers can contain embedded semiconductors, MMICs, etched resistors, circuit patterns, and plated-through vias to form a SMD module that requires no additional packaging and is suitable for automated assembly.