ILD211T

Transistor Output Optocouplers Phototransistor Out Dual CTR >20%

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SeekIC No. : 0097480 Detail

ILD211T: Transistor Output Optocouplers Phototransistor Out Dual CTR >20%

floor Price/Ceiling Price

US $ .47~.68 / Piece | Get Latest Price
Part Number:
ILD211T
Mfg:
Vishay Semiconductors
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $.68
  • $.63
  • $.54
  • $.47
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/3/27

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Product Details

Quick Details

Input Type : DC Maximum Collector Emitter Voltage : 70 V
Maximum Collector Emitter Saturation Voltage : 0.4 V Isolation Voltage : 4000 Vrms
Maximum Forward Diode Voltage : 1.55 V Maximum Power Dissipation : 300 mW
Maximum Operating Temperature : + 100 C Minimum Operating Temperature : - 55 C
Package / Case : SOIC-8 Packaging : Reel    

Description

Current Transfer Ratio :
Maximum Collector Current :
Maximum Collector Emitter Saturation Voltage : 0.4 V
Minimum Operating Temperature : - 55 C
Packaging : Reel
Maximum Operating Temperature : + 100 C
Maximum Power Dissipation : 300 mW
Input Type : DC
Maximum Collector Emitter Voltage : 70 V
Package / Case : SOIC-8
Maximum Forward Diode Voltage : 1.55 V
Isolation Voltage : 4000 Vrms


Features:

• Two Channel Coupler
• SOIC-8A Surface Mountable Package
• Standard Lead Spacing of .05 "
• Available only on Tape and Reel Option (Conforms to EIA Standard 481-2)
• Isolation Test Voltage, 3000 VRMS
• Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering
• Lead-free component
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC



Application

• UL1577, File No. E52744 System Code Y


Pinout

  Connection Diagram


Specifications

Parameter Test condition Symbol Value Unit
Peak reverse voltage   VR 6.0 V
Peak pulsed current 1.0 µs, 300 pps   1.0 mA
Continuous forward current per
channel
    30 A
Power dissipation   Pdiss 50 mW
Derate linearly from 25 °C     0.66 mW/°C



Description

The ILD205T/ 206T/ 207T/ 211T/ 213T/ 217T are optically coupled pairs with a Gallium Arsenide infrared LED and a silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and output. The ILD205T/ 206T/ 207T/ 211T/ 213T/ 217T come in a standard SOIC-8A small outline package for surface mounting which makes ILD211T ideally suited for high density applications with limited space. In addition to eliminating through-holes requirements, this package conforms to standards for surface mounted devices.

A specified minimum and maximum CTR ILD211T allows a narrow tolerance in the electrical design of the adjacent circuits. The high BVCEO of 70 V gives a higher safety margin compared to the industry standard of 30 V.




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