Features: • Cascadable 50 Gain Block• Low Noise Figure: 2.5 dB Typical at 1.5 GHz• High Gain: 26.0 dB Typical at 2.8 GHz• 3 dB Bandwidth: DC to 2.8 GHz• Unconditionally Stable (k>1)• Low Power ConsumptionSpecifications Parameter Absolute Maximum[1] ...
INA-03100: Features: • Cascadable 50 Gain Block• Low Noise Figure: 2.5 dB Typical at 1.5 GHz• High Gain: 26.0 dB Typical at 2.8 GHz• 3 dB Bandwidth: DC to 2.8 GHz• Unconditionall...
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Parameter | Absolute Maximum[1] |
Device Current | 50 mA |
Power Dissipation[2,3] | 200 mW |
RF Input Power | +13 dBm |
Junction Temperature | 200°C |
Storage Temperature | 65 to 200°C |
Thermal Resistance: jc = 70°C/W |
The INA-03100 is a low-noise silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) feedback amplifier chip. It is designed for narrow or wide bandwidth commercial, industrial and military applications that require high gain and low noise IF or RF amplification with minimum power consumption.
The INA series of MMICs of the INA-03100 is fabricated using HP's 10 GHz fT, 25 GHz fMAX, ISOSAT™-I silicon bipolar process which uses nitride self-alignment, submicrometer lithography, trench isolation, ion implantation, gold metallization and polyimide intermetal dielectric and scratch protection to achieve excellent performance, uniformity and reliability.
The recommended assembly procedure of the INA-03100 is gold-eutectic die attach at 400°C and either wedge or ball bonding using 0.7 mil gold wire.[1]