INA-30311

Notes:
  1. Operation of this device above any one of these limits may cause permanent damage.
  2. T_C = 25°C (T_C is defined to be the temperature at the package pins where contact is made to the circuit board).

Hewlett-Packard's INA-30311 is a Silicon monolithic amplifier for applications to 1.0 GHz. Packaged in a miniature SOT-143 package, it requires very little board space.

The INA-30311 uses an internally biased topology which eliminates the need for external components and provides decreased sensitivity to ground inductance.

The INA-30311 is designed with an output impedance that varies from near 200 at low frequencies to near 50 at higher frequencies. This provides a matching advantage for IF circuits, as well as improved power efficiency, making it suitable for battery powered designs.

The INA-30311 is fabricated using HP's 30 GHz f_MAX ISOSAT^TM Silicon bipolar process which uses nitride self-alignment submicrometer lithography, trench isolation, ion implantation, gold metallization, and polyimide intermetal dielectric and scratch protection to achieve superior performance, uniformity, and reliability.