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IPA60R299CP

MOSFET COOL MOS PWR TRANS MAX 650V

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IPA60R299CP: MOSFET COOL MOS PWR TRANS MAX 650V

IPA60R299CP Data Sheet

floor Price/Ceiling Price

US $ .91~.97 / Piece | Get Latest Price
Part Number:
IPA60R299CP
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $.97
  • $.94
  • $.93
  • $.91
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 11 A
Resistance Drain-Source RDS (on) : 0.299 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220FP Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220FP
Drain-Source Breakdown Voltage : 600 V
Resistance Drain-Source RDS (on) : 0.299 Ohms
Continuous Drain Current : 11 A


Features:

• Lowest figure-of-merit RONxQg
• Ultra low gate charge 6.6
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant


Application

• Hard switching SMPS topologies


Specifications

Parameter
Symbol
 Conditions Value
Units
Continuous Drain Current2)
ID
 TC=25
11
A
Continuous Drain Current2)
ID
 TC=100
7
Continuous Drain Current3)
IDpulse
TC=25
34
Avalanche energy, single pulse
EAS
I D=4.4 A, V DD=50 V
290
mJ
Avalanche energy, repetitive tAR 3)4)
EAR
I D=4.4 A, V DD=50 V
0.44
mJ
Avalanche Current3)4)
IAR
4.4
A
MOSFET dv /dt ruggedness
dv/dt
 V DS=0...480 V
50
V/ns
Gate source voltage
V GS
 static
AC (f >1 Hz)
±20
±30
V
Power dissipation
P tot
 T C=25
33
W
Junction and Storage Temperature Range
TJ, TSTG
-55 ... 150

Mounting torque
M2.5 screws
50
Ncm



Parameters:

Technical/Catalog InformationIPA60R299CP
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25° C11A
Rds On (Max) @ Id, Vgs299 mOhm @ 6.6A, 10V
Input Capacitance (Ciss) @ Vds 1100pF @ 100V
Power - Max33W
PackagingTube
Gate Charge (Qg) @ Vgs29nC @ 10V
Package / CaseTO-220FP
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IPA60R299CP
IPA60R299CP



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