Purchase IPB05CN10N G, In-stock IPB05CN10N G From SeekIC.
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IPB05CN10N G
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DataSheet
General Description
IPB05CN10N G Maximum Ratings
| Parameter | Symbol | Conditions | Value | Unit |
| Continuous drain current | I D | T C=25 2) | 100 | A |
| T C=100 | 100 | |||
| Pulsed drain current3) | I D,pulse | T C=25 | 400 | |
| Avalanche energy, single pulse | E AS | I D=100 A, R GS=25 | 826 | mJ |
| Reverse diode dv /dt | dv /dt | I D=100 A, V DS=80 V, di /dt =100 A/s, T j,max=175 |
6 | kV/s |
| Gate source voltage4) | V GS | ±20 | V | |
| Power dissipation | P tot | T C=25 | 300 | W |
| Operating and storage temperature | T j, T stg | -55 ... 175 | ||
| IEC climatic category; DIN IEC 68-1 | 55/175/56 |
IPB05CN10N G Features
• N-channel, normal level
• Excellent gate charge x RDS(on) product (FOM)
• Very low on-resistance RDS(on)
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
• Excellent gate charge x RDS(on) product (FOM)
• Very low on-resistance RDS(on)
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
IPB03N03LA
PDF/DataSheet Download
- Datasheet: IPB03N03LA
- File Size: 325335 KB
- Manufacturer: INFINEON [Infineon Technologies AG]
- Click here to Download
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