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IPB05CN10N G

MOSFET N-Channel MOSFET 20-200V

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SeekIC No. : 00163353 Detail

IPB05CN10N G: MOSFET N-Channel MOSFET 20-200V

IPB05CN10N G Data Sheet

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Part Number:
IPB05CN10N G
Mfg:
Infineon Technologies
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 100 A
Resistance Drain-Source RDS (on) : 5.4 m Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-263 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 100 V
Continuous Drain Current : 100 A
Package / Case : TO-263
Resistance Drain-Source RDS (on) : 5.4 m Ohms


Features:

• N-channel, normal level
• Excellent gate charge x RDS(on) product (FOM)
• Very low on-resistance RDS(on)
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification


Specifications

Parameter Symbol Conditions Value Unit
Continuous drain current I D T C=25 2) 100 A
T C=100 100
Pulsed drain current3) I D,pulse T C=25 400
Avalanche energy, single pulse E AS I D=100 A, R GS=25 826 mJ
Reverse diode dv /dt dv /dt I D=100 A, V DS=80 V,
di /dt =100 A/s,
T j,max=175 		6 kV/s
Gate source voltage4) V GS   ±20 V
Power dissipation P tot T C=25 300 W
Operating and storage temperature T j, T stg   -55 ... 175
IEC climatic category; DIN IEC 68-1     55/175/56  



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