IPB10N03LB

MOSFET N-CH 30V 50A D2PAK

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IPB10N03LB: MOSFET N-CH 30V 50A D2PAK

floor Price/Ceiling Price

Part Number:
IPB10N03LB
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Quick Details

Series: OptiMOS™ Manufacturer: Infineon Technologies
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Current - Collector (Ic) (Max): - FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V Continuous Drain Current : 15 A
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 50A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 9.6 mOhm @ 50A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 2V @ 20µA Gate Charge (Qg) @ Vgs: 13nC @ 5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 1639pF @ 15V
Power - Max: 58W Mounting Type: Surface Mount
Package / Case: TO-263-4, D²Pak (3 Leads + Tab), TO-263AA Supplier Device Package: PG-TO263-3    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Gate Charge (Qg) @ Vgs: 13nC @ 5V
Current - Continuous Drain (Id) @ 25° C: 50A
Power - Max: 58W
Package / Case: TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
Manufacturer: Infineon Technologies
Series: OptiMOS™
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: PG-TO263-3
Rds On (Max) @ Id, Vgs: 9.6 mOhm @ 50A, 10V
Input Capacitance (Ciss) @ Vds: 1639pF @ 15V


Features:

• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC1) for target applications
• N-channel - Logic level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• Superior thermal resistance
• 175 operating temperature
• dv /dt rated
• Pb-free lead plating; RoHS compliant



Specifications

Parameter
Symbol
Conditions
Value
Unit
Continuous drain current
ID
TC=25 2)
50
A
TC=100
41
Pulsed drain current2)
ID,pulse
TC=253)
200
Avalanche energy, single pulse
EAS
ID=50 A, RGS=25
57
mJ
Reverse diode dv /dt
dv /dt
ID=50 A, VDS=20 V,
di/dt =200 A/s,
Tj,max=175
6
kV/s
VGS
±20
V
Power dissipation
Ptot
TC=25
58
W
Operating and storage temperature
Tj, Tstg
-55 ... 175
IEC climatic category; DIN IEC 68-1
55/175/56
1) J-STD20 and JESD22


Parameters:

Technical/Catalog InformationIPB10N03LB
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C50A
Rds On (Max) @ Id, Vgs9.6 mOhm @ 50A, 10V
Input Capacitance (Ciss) @ Vds 1639pF @ 15V
Power - Max58W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs13nC @ 5V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names IPB10N03LB
IPB10N03LB



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