Position: Home  > All Categories> Integrated Circuits (ICs) > IPB16CNE8NG

IPB16CNE8NG

Features: • N-channel, normal level• Excellent gate charge x RDS(on) product (FOM)• Very low on-resistance RDS(on)• 175 operating temperature• Pb-free lead plating; RoHS compliant• Qualified according to JEDEC1) for target application• Ideal for high-freq...

product image

IPB16CNE8NG Picture
See larger image
SeekIC No. : 004375740 Detail

IPB16CNE8NG: Features: • N-channel, normal level• Excellent gate charge x RDS(on) product (FOM)• Very low on-resistance RDS(on)• 175 operating temperature• Pb-free lead plating; Ro...

IPB16CNE8NG Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
IPB16CNE8NG
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/27

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• N-channel, normal level
• Excellent gate charge x RDS(on) product (FOM)
• Very low on-resistance RDS(on)
• 175 operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification




Specifications

Parameter Symbol Conditions Value Unit
Continuous drain current ID T C=25 53 A
T C=100 38
Pulsed drain current2) ID,pulse T C=25 212
Avalanche energy, single pulse EAS I D=53A, RGS=25 107 mJ
Reverse diode dv /dt dv/dt ID=53A, VDS=68V,
di/dt =100 A/µs,
Tj,max=175 		6 kV/µs
Gate source voltage3) VGS   ±20 V
Power dissipation Ptot T C=25 100 W
Operating and storage temperature Tj, Tstg   -55 ... 175  
IEC climatic category; DIN IEC 68-1     55/175/56


1)J-STD20 and JESD22
2) see figure 3
3) Tjmax=150 and duty cycle D=0.01 for Vgs<-5V




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Audio Products
HUC1002
WM-64CT
Test Equipment
TOP853
TOP2005
Filters
PICO2205A
PICO2204A
Batteries, Chargers, Holders
ICR18650-28A
ICR18650-26F/h
Hardware, Fasteners, Accessories
MF-A02
LMS700KF07
Switches
US32DMRJ
HBGQ22P-11ET
View more