IPB180N04S3-02

MOSFET N-CH 40V 180 A

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IPB180N04S3-02: MOSFET N-CH 40V 180 A

floor Price/Ceiling Price

US $ .94~1.22 / Piece | Get Latest Price
Part Number:
IPB180N04S3-02
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~605
  • 605~1000
  • 1000~2000
  • 2000~5000
  • Unit Price
  • $1.22
  • $1.03
  • $.97
  • $.94
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/3/28

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 40 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 180 A
Resistance Drain-Source RDS (on) : 1.6 m Ohms Configuration : Single Quint Source
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-263 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 40 V
Package / Case : TO-263
Continuous Drain Current : 180 A
Configuration : Single Quint Source
Resistance Drain-Source RDS (on) : 1.6 m Ohms


Parameters:

Technical/Catalog InformationIPB180N04S3-02
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25° C180A
Rds On (Max) @ Id, Vgs1.5 mOhm @ 80A, 10V
Input Capacitance (Ciss) @ Vds 14300pF @ 25V
Power - Max300W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs210nC @ 10V
Package / CaseD²Pak, TO-263 (7 leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IPB180N04S3 02
IPB180N04S302



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