MOSFET OptiMOS-T2 PWR TRANS 55V 80A
IPB80N06S3L-05: MOSFET OptiMOS-T2 PWR TRANS 55V 80A
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Features: • N-channel, normal level• Excellent gate charge x RDS(on) product (FOM)R...
| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 55 V | ||
| Gate-Source Breakdown Voltage : | +/- 16 V | Continuous Drain Current : | 80 A | ||
| Resistance Drain-Source RDS (on) : | 4.5 m Ohms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | TO-263 | Packaging : | Reel |
| Technical/Catalog Information | IPB80N06S3L-05 |
| Vendor | Infineon Technologies (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25° C | 80A |
| Rds On (Max) @ Id, Vgs | 4.5 mOhm @ 69A, 10V |
| Input Capacitance (Ciss) @ Vds | 13060pF @ 25V |
| Power - Max | 165W |
| Packaging | Cut Tape (CT) |
| Gate Charge (Qg) @ Vgs | 273nC @ 10V |
| Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IPB80N06S3L 05 IPB80N06S3L05 IPB80N06S3L 05INCT ND IPB80N06S3L05INCTND IPB80N06S3L-05INCT |