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IPD14N06S2-80

MOSFET OPTIMOS PWR-TRANS N-CH 55V 17A

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SeekIC No. : 00153614 Detail

IPD14N06S2-80: MOSFET OPTIMOS PWR-TRANS N-CH 55V 17A

IPD14N06S2-80 Data Sheet

floor Price/Ceiling Price

US $ .23~.46 / Piece | Get Latest Price
Part Number:
IPD14N06S2-80
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~500
  • Unit Price
  • $.46
  • $.39
  • $.31
  • $.23
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 55 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 14 A
Resistance Drain-Source RDS (on) : 80 m Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-252 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 55 V
Package / Case : TO-252
Continuous Drain Current : 14 A
Resistance Drain-Source RDS (on) : 80 m Ohms


Parameters:

Technical/Catalog InformationIPD14N06S2-80
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C17A
Rds On (Max) @ Id, Vgs80 mOhm @ 7A, 10V
Input Capacitance (Ciss) @ Vds 293pF @ 25V
Power - Max47W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs10nC @ 10V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IPD14N06S2 80
IPD14N06S280



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