IPD20N03L

MOSFET N-CH 30V 30A DPAK

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SeekIC No. : 003433142 Detail

IPD20N03L: MOSFET N-CH 30V 30A DPAK

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Part Number:
IPD20N03L
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Quick Details

Series: OptiMOS™ Manufacturer: Infineon Technologies
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Current - Collector (Ic) (Max): - FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V Continuous Drain Current : 15 A
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 30A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 20 mOhm @ 15A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 2V @ 25µA Gate Charge (Qg) @ Vgs: 11nC @ 5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 700pF @ 25V
Power - Max: 60W Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: PG-TO252-3    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Current - Continuous Drain (Id) @ 25° C: 30A
Power - Max: 60W
Input Capacitance (Ciss) @ Vds: 700pF @ 25V
Gate Charge (Qg) @ Vgs: 11nC @ 5V
Manufacturer: Infineon Technologies
Series: OptiMOS™
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 2V @ 25µA
Rds On (Max) @ Id, Vgs: 20 mOhm @ 15A, 10V


Features:

· N-Channel
· Logic Level
· Low On-Resistance RDS(on)
· Excellent Gate Charge x RDS(on) product (FOM)
· Superior thermal resistance
· 175°C operating temperature
· Avalanche rated
· dv/dt rated
· Ideal for fast switching buck converters



Specifications

Parameter Symbol Value Unit
Continuous drain current1)
TC=25°C)
ID 30
30
A
Pulsed drain current
TC=25°C
ID puls 120
Avalanche energy, single pulse)
ID=20A, VDD=25V, RGS=25
EAS 15 mJ
Repetitive avalanche energy, limited by Tjmax2) EAR 6
Reverse diode dv/dt
IS=30A, VDS=24V, di/dt=200A/µs, Tjmax=175
dv/dt 6 kV/µs
Gate source voltage VGS ±20 V
Power dissipation
TC=25
Ptot 60 W
Operating and storage temperature Tj , Tstg -55... +175
IEC climatic category; DIN IEC 68-1   55/175/56  



Parameters:

Technical/Catalog InformationIPD20N03L
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C30A
Rds On (Max) @ Id, Vgs20 mOhm @ 15A, 10V
Input Capacitance (Ciss) @ Vds 700pF @ 25V
Power - Max60W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs11nC @ 5V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names IPD20N03L
IPD20N03L



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