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IPD30N06S2L-13

MOSFET OPTIMOS PWR-TRANS N-CH 55V 30A 13mOhms

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SeekIC No. : 00147016 Detail

IPD30N06S2L-13: MOSFET OPTIMOS PWR-TRANS N-CH 55V 30A 13mOhms

IPD30N06S2L-13 Data Sheet

floor Price/Ceiling Price

US $ .48~.71 / Piece | Get Latest Price
Part Number:
IPD30N06S2L-13
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~500
  • Unit Price
  • $.71
  • $.61
  • $.53
  • $.48
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 55 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 30 A
Resistance Drain-Source RDS (on) : 13 m Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-252 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 55 V
Continuous Drain Current : 30 A
Package / Case : TO-252
Resistance Drain-Source RDS (on) : 13 m Ohms


Parameters:

Technical/Catalog InformationIPD30N06S2L-13
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C30A
Rds On (Max) @ Id, Vgs13 mOhm @ 30A, 10V
Input Capacitance (Ciss) @ Vds 1800pF @ 25V
Power - Max136W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs69nC @ 10V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IPD30N06S2L 13
IPD30N06S2L13



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