IPD30N06S2L-23

MOSFET OPTIMOS PWR-TRANS N-CH 55V 30A 23mOhms

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IPD30N06S2L-23: MOSFET OPTIMOS PWR-TRANS N-CH 55V 30A 23mOhms

floor Price/Ceiling Price

US $ .33~.6 / Piece | Get Latest Price
Part Number:
IPD30N06S2L-23
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~500
  • Unit Price
  • $.6
  • $.54
  • $.43
  • $.33
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 55 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 30 A
Resistance Drain-Source RDS (on) : 23 mOhms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-252 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 55 V
Continuous Drain Current : 30 A
Package / Case : TO-252
Resistance Drain-Source RDS (on) : 23 mOhms


Parameters:

Technical/Catalog InformationIPD30N06S2L-23
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C30A
Rds On (Max) @ Id, Vgs23 mOhm @ 22A, 10V
Input Capacitance (Ciss) @ Vds 1091pF @ 25V
Power - Max100W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs42nC @ 10V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IPD30N06S2L 23
IPD30N06S2L23



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