MOSFET OPTIMOS-T N-CH 55V 50A 7.8mOhms
IPD50N06S3L-08: MOSFET OPTIMOS-T N-CH 55V 50A 7.8mOhms
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 55 V | ||
Gate-Source Breakdown Voltage : | +/- 16 V | Continuous Drain Current : | 50 A | ||
Resistance Drain-Source RDS (on) : | 0.0078 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
Package / Case : | TO-252 | Packaging : | Reel |