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IPI100N06S3-04

MOSFET OptiMOS-T2 PWR TRANS 55V 100A

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SeekIC No. : 00163438 Detail

IPI100N06S3-04: MOSFET OptiMOS-T2 PWR TRANS 55V 100A

IPI100N06S3-04 Data Sheet

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Part Number:
IPI100N06S3-04
Mfg:
Infineon Technologies
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 55 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 100 A
Resistance Drain-Source RDS (on) : 4.4 m Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-262 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Continuous Drain Current : 100 A
Drain-Source Breakdown Voltage : 55 V
Package / Case : TO-262
Resistance Drain-Source RDS (on) : 4.4 m Ohms


Parameters:

Technical/Catalog InformationIPI100N06S3-04
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C100A
Rds On (Max) @ Id, Vgs4.4 mOhm @ 80A, 10V
Input Capacitance (Ciss) @ Vds 14230pF @ 25V
Power - Max214W
PackagingTube
Gate Charge (Qg) @ Vgs314nC @ 10V
Package / CaseI²Pak, TO-262 (3 straight leads + tab)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IPI100N06S3 04
IPI100N06S304
IPI100N06S3 04IN ND
IPI100N06S304INND
IPI100N06S3-04IN



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