MOSFET OptiMOS -T PWR TRANS 100V 100A
IPI100N10S3-05: MOSFET OptiMOS -T PWR TRANS 100V 100A
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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 100 V |
| Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 100 A |
| Resistance Drain-Source RDS (on) : | 4.8 mOhms | Configuration : | Single |
| Maximum Operating Temperature : | + 175 C | Package / Case : | TO-262 |
| Packaging : | Tube |
| Technical/Catalog Information | IPI100N10S3-05 |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 100A |
| Rds On (Max) @ Id, Vgs | 5.1 mOhm @ 100A, 10V |
| Input Capacitance (Ciss) @ Vds | 11570pF @ 25V |
| Power - Max | 300W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 176nC @ 10V |
| Package / Case | I²Pak, TO-262 (3 straight leads + tab) |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IPI100N10S3 05 IPI100N10S305 |