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IPI90R1K0C3

MOSFET N-CH 900V 5.7A TO-262

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SeekIC No. : 003431911 Detail

IPI90R1K0C3: MOSFET N-CH 900V 5.7A TO-262

IPI90R1K0C3 Data Sheet

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US $ .64~.64 / Piece | Get Latest Price
Part Number:
IPI90R1K0C3
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~10000
  • Unit Price
  • $.64
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2025/12/4

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Product Details

Quick Details

Series: CoolMOS™ Manufacturer: Infineon Technologies
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 900V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 5.7A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 1 Ohm @ 3.3A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 3.5V @ 370µA Gate Charge (Qg) @ Vgs: 34nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 850pF @ 100V
Power - Max: 89W Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Supplier Device Package: PG-TO262-3    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Gate Charge (Qg) @ Vgs: 34nC @ 10V
Current - Continuous Drain (Id) @ 25° C: 5.7A
Packaging: Tube
Mounting Type: Through Hole
Rds On (Max) @ Id, Vgs: 1 Ohm @ 3.3A, 10V
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Drain to Source Voltage (Vdss): 900V
Power - Max: 89W
Series: CoolMOS™
Manufacturer: Infineon Technologies
Supplier Device Package: PG-TO262-3
Vgs(th) (Max) @ Id: 3.5V @ 370µA
Input Capacitance (Ciss) @ Vds: 850pF @ 100V


Parameters:

Technical/Catalog InformationIPI90R1K0C3
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)900V
Current - Continuous Drain (Id) @ 25° C5.7A
Rds On (Max) @ Id, Vgs1 Ohm @ 3.3A, 10V
Input Capacitance (Ciss) @ Vds 850pF @ 100V
Power - Max89W
PackagingTube
Gate Charge (Qg) @ Vgs34nC @ 10V
Package / CaseI²Pak, TO-262 (3 straight leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IPI90R1K0C3
IPI90R1K0C3



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