Position: Home  > All Categories> Integrated Circuits (ICs) > IPP04CN10NG

IPP04CN10NG

MOSFET N-CH 100V 100A TO220-3

product image

IPP04CN10NG Picture
See larger image
SeekIC No. : 003431915 Detail

IPP04CN10NG: MOSFET N-CH 100V 100A TO220-3

IPP04CN10NG Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
IPP04CN10NG
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/5/13

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Series: OptiMOS™ Manufacturer: Infineon Technologies
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 100V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 100A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 100A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) @ Vgs: 210nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 13800pF @ 50V
Power - Max: 300W Mounting Type: Through Hole
Package / Case: TO-220-3 Supplier Device Package: PG-TO220-3    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Vgs(th) (Max) @ Id: 4V @ 250µA
Current - Continuous Drain (Id) @ 25° C: 100A
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3
Gate Charge (Qg) @ Vgs: 210nC @ 10V
Power - Max: 300W
Manufacturer: Infineon Technologies
Series: OptiMOS™
Supplier Device Package: PG-TO220-3
Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 100A, 10V
Input Capacitance (Ciss) @ Vds: 13800pF @ 50V


Parameters:

Technical/Catalog InformationIPP04CN10NG
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C100A
Rds On (Max) @ Id, Vgs4.2 mOhm @ 100A, 10V
Input Capacitance (Ciss) @ Vds 13800pF @ 50V
Power - Max300W
PackagingTube
Gate Charge (Qg) @ Vgs210nC @ 10V
Package / CaseTO-220
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IPP04CN10NG
IPP04CN10NG
IPP04CN10NGIN ND
IPP04CN10NGINND
IPP04CN10NGIN



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Memory Cards, Modules
WT32
VTL5C7
Tapes, Adhesives
803
AC452-2
Power Supplies - External/Internal (Off-Board)
A76L-0300-0077
A5E01231722-F2
Capacitors
GRM188R71H103KA01D
GRM21BR71H104KA01L
Line Protection, Backups
BX0023
A20B-1008-0550
Kits
IT243
UVSC-110-4E1
View more