IPP04CN10NG

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Vgs(th) (Max) @ Id: 4V @ 250µA
Current - Continuous Drain (Id) @ 25° C: 100A
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3
Gate Charge (Qg) @ Vgs: 210nC @ 10V
Power - Max: 300W
Manufacturer: Infineon Technologies
Series: OptiMOS™
Supplier Device Package: PG-TO220-3
Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 100A, 10V
Input Capacitance (Ciss) @ Vds: 13800pF @ 50V


Parameters:

Technical/Catalog Information	IPP04CN10NG
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	100A
Rds On (Max) @ Id, Vgs	4.2 mOhm @ 100A, 10V
Input Capacitance (Ciss) @ Vds	13800pF @ 50V
Power - Max	300W
Packaging	Tube
Gate Charge (Qg) @ Vgs	210nC @ 10V
Package / Case	TO-220
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IPP04CN10NG IPP04CN10NG IPP04CN10NGIN ND IPP04CN10NGINND IPP04CN10NGIN