Position: Home  > All Categories> Integrated Circuits (ICs) > IPP80CN10N G

IPP80CN10N G

MOSFET OptiMOS 2 Power TRANSISTOR 100V 13A

product image

IPP80CN10N G Picture
See larger image
SeekIC No. : 00154630 Detail

IPP80CN10N G: MOSFET OptiMOS 2 Power TRANSISTOR 100V 13A

IPP80CN10N G Data Sheet

floor Price/Ceiling Price

US $ .46~.75 / Piece | Get Latest Price
Part Number:
IPP80CN10N G
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $.75
  • $.67
  • $.54
  • $.46
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/28

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 13 A
Resistance Drain-Source RDS (on) : 0.08 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220
Resistance Drain-Source RDS (on) : 0.08 Ohms
Continuous Drain Current : 13 A


Features:

• N-channel, normal level
• Excellent gate charge x RDS(on) product (FOM)
• Very low on-resistance RDS(on)
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification


Specifications

Parameter Symbol Conditions Value Unit
Continuous drain current ID TC=25 °C 13 A
TC=100 °C 9

Pulsed drain current2)

 ID,pulse TC=25 °C 52
Avalanche energy, single pulse EAS ID =13 A, RGS=25 17 mJ
Reverse diode dv /dt dv/dt ID =13 A, VDS=80 V,
di /dt =100 A/s,
Tj,max=175 °C		 6 kV/s
Gate source voltage3) VGS   ±20 V
Power dissipation Ptot TC=25 °C 31 W
Operating and storage temperature Tj, Tstg   -55 ... 175 °C
IEC climatic category; DIN IEC 68-1     55/175/56  
1)J-STD20 and JESD22
2) see figure 3
3) Tjmax=150°C and duty cycle D=0.01 for Vgs<-5V


Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Inductors, Coils, Chokes
DR127-330-R
SD53-100-R
Power Supplies - Board Mount
HC-06
PM150RSA060-S81AH0G
Resistors
A101G
3006P-1-205LF
Prototyping Products
AVT4168
DE1
Cables, Wires - Management
NM-SF50+
CCK26.5-MM-190-30
Crystals and Oscillators
WT325BI0030.000000
2SB49
View more