MFG:IR Package Cooled:TO-220 D/C:05+
MFG: IR
Package Cooled: TO-220
D/C: 05+
Description: The IPS0151/IPS0151S are fully protected three terminal SMART POWER MOSFETs that feature over-current,...
The IPS0151/IPS0151S are fully protected three terminal SMART POWER MOSFETs that feature over-current, over-temperature, ESD protection and drain to source active clamp.These devices combine a HEXFET® POWER MOSFET and a gate driver. They offer full protection and high reliability required in harsh environments. The driver allows short switching times and provides efficient protection by turning OFF the power MOSFET when the temperature exceeds 165 or when the drain current reaches 35A. The device restarts once the input is cycled. The avalanche capability is significantly enhanced by the active clamp and covers most inductive load demagnetizations.
| Symbol | Parameter | Min. | Max. | Units | Test Conditions |
| Vds | Maximum drain to source voltage | - | 47 | V | |
| Vin | Maximum Input voltage | -0.3 |
7 | ||
| Iin, max | Maximum IN current | -10 | +10 | mA | |
| Isd cont. | Diode max. continuous current rth=62/W IPS0151 |
- | 2.8 | A | |
| rth=5/W IPS015135 | - | 35 | TO220 free air | ||
| rth=80/W IPS0151S | - | 2.2 | TO220 with Rth=5oC/W | ||
| Isd pulsed | Diode max. pulsed current (1) | - | 45 | SMD220 Std footprint | |
| Pd | Maximum power dissipation(1) (rth=62/W) IPS0151 |
- | 2 | W | |
| (rth=80/W) IPS0151S | - | 1.56 | |||
| ESD1 | Electrostatic discharge voltage (Human Body) | - | 4 | kV | C=100pF, R=1500Ω, |
| ESD2 | Electrostatic discharge voltage (Machine Model) | - | 0.5 | C=200pF, R=0Ω, L=10µH | |
| T stor. | Max. storage temperature | -55 | 150 | ||
| Tj max. | Max. junction temperature | -40 | +150 | ||
| Tlead | Lead temperature (soldering, 10 seconds) | - | 300 |
IPS0151
PDF/DataSheet Download
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