Position: Home  > All Categories> Integrated Circuits (ICs) > IPW60R099CP

IPW60R099CP

MOSFET COOL MOS PWR TRANS MAX PWR 650V

product image

IPW60R099CP Picture
See larger image
SeekIC No. : 00147038 Detail

IPW60R099CP: MOSFET COOL MOS PWR TRANS MAX PWR 650V

IPW60R099CP Data Sheet

floor Price/Ceiling Price

US $ 2.91~3.14 / Piece | Get Latest Price
Part Number:
IPW60R099CP
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~500
  • Unit Price
  • $3.14
  • $3.05
  • $2.97
  • $2.91
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/12/4

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 31 A
Resistance Drain-Source RDS (on) : 0.099 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-247 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 31 A
Drain-Source Breakdown Voltage : 600 V
Package / Case : TO-247
Resistance Drain-Source RDS (on) : 0.099 Ohms


Features:

• Lowest figure-of-merit RON x Qg
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
• Ultra low gate charge


Specifications

Parameter
Symbol
Conditions
Value
Unit
Continuous drain current
ID
TC=25
31
A
TC=100
19
Pulsed drain current2)
ID,pulse
TC=251)
93
Avalanche energy, single pulse
EAS
ID=11A,VDD=50V
800
mJ
Avalanche energy, repetitive tAR2),3)
EAR
ID=11A,VDD=50V
1.2
Avalanche energy, repetitive tAR2),3)
IAR
11
A
MOSFET dv /dt ruggedness
dv /dt
VDS=0...480 V
50
V/ns
Gate source voltage
VGS
static
±20
V
AC (f >1 Hz)
±30
Power dissipation
Ptot
TC=25
255
W
Operating and storage temperature
Tj, Tstg
-55 ... 150
Mounting torque
M3 and M3.5 screws
60
Ncm




Parameters:

Technical/Catalog InformationIPW60R099CP
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25° C31A
Rds On (Max) @ Id, Vgs99 mOhm @ 18A, 10V
Input Capacitance (Ciss) @ Vds 2800pF @ 100V
Power - Max255W
PackagingTube
Gate Charge (Qg) @ Vgs80nC @ 10V
Package / CaseTO-247
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IPW60R099CP
IPW60R099CP



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Undefined Category
VI-B63-IU
X27 589
Tapes, Adhesives
803
AC452-2
Batteries, Chargers, Holders
ICR18650-28A
ICR18650-26F/h
Circuit Protection
A50QS75-4Y
F-17*77
Switches
US32DMRJ
HBGQ22P-11ET
Power Supplies - Board Mount
HC-06
PM150RSA060-S81AH0G
View more