Purchase IR2101S, In-stock IR2101S From SeekIC.
MFG:IOR Package Cooled:SMD


Part Number: IR2101S
MFG: IOR
Package Cooled: SMD
Description: The IR2101(S)/IR2102(S) are high voltage, high speed power MOSFET and IGBT drivers with independent hi...
MFG:IOR Package Cooled:SMD


MFG: IOR
Package Cooled: SMD
Description: The IR2101(S)/IR2102(S) are high voltage, high speed power MOSFET and IGBT drivers with independent hi...
The IR2101(S)/IR2102(S) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.
| Symbol | Definition | Min. | Max. | Units | |
| VB | High side floating supply voltage | -0.3 | 625 | V | |
| VS | High side floating supply offset voltage | VB - 25 | VB + 0.3 | ||
| VHO | High side floating output voltage | VS - 0.3 | VB + 0.3 | ||
| VCC | Low side and logic fixed supply voltage | -0.3 | 25 | ||
| VLO | Low side output voltage | -0.3 | VCC + 0.3 | ||
| VIN | Logic input voltage (HIN & LIN ) | - 0.3 | VCC + 0.3 | ||
| dVS/dt | Allowable offset supply voltage transient | - | 50 | V/ns | |
| PD | Package power dissipation @ TA +25 | (8 Lead PDIP) | - |
1.0 |
W |
| (8 Lead SOIC) | - | 0.625 | |||
| RthJA | Thermal resistance, junction to ambient | (8 Lead PDIP) | - |
125 |
/W |
| (8 Lead SOIC) | - | 200 | |||
| TJ | Junction temperature | - | 150 | ||
| TS | Storage temperature | -55 | 150 | ||
| TL | Lead temperature (soldering, 10 seconds) | - | 300 | ||
IR2101S
PDF/DataSheet Download








