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MFG:IOR  Package Cooled:SMD  

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Part Number: IR2101S

 

MFG: IOR

Package Cooled: SMD

 

Description: The IR2101(S)/IR2102(S) are high voltage, high speed power MOSFET and IGBT drivers with independent hi...


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IR2101S General Description


The IR2101(S)/IR2102(S) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.

IR2101S Maximum Ratings

Symbol Definition Min. Max. Units
VB High side floating supply voltage -0.3 625 V
VS High side floating supply offset voltage VB - 25 VB + 0.3
VHO High side floating output voltage VS - 0.3 VB + 0.3
VCC Low side and logic fixed supply voltage -0.3 25
VLO Low side output voltage -0.3 VCC + 0.3
VIN Logic input voltage (HIN & LIN ) - 0.3 VCC + 0.3
dVS/dt Allowable offset supply voltage transient - 50 V/ns
PD Package power dissipation @ TA +25 (8 Lead PDIP) -
1.0
W
(8 Lead SOIC) - 0.625
RthJA Thermal resistance, junction to ambient (8 Lead PDIP) -
125
/W
(8 Lead SOIC) - 200
TJ Junction temperature - 150
TS Storage temperature -55 150
TL Lead temperature (soldering, 10 seconds) - 300

IR2101S Features

• Floating channel designed for bootstrap operation
   Fully operational to +600V
   Tolerant to negative transient voltage
   dV/dt immune
• Gate drive supply range from 10 to 20V
• Undervoltage lockout
• 3.3V, 5V, and 15V logic input compatible
• Matched propagation delay for both channels
• Outputs in phase with inputs (IR2101) or out of phase with inputs (IR2102)

IR2101S Connection Diagram

IR2101S  Connection Diagram

IR2101S datasheet

IR2101S
PDF/DataSheet Download

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