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Part Number: IR2108(4)(S)
Description: The IR2108(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and lo...
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IR2108(4)(S)
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DataSheet
General Description
IR2108(4)(S) General Description
The IR2108(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Pro-prietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.
IR2108(4)(S) Maximum Ratings
|
Symbol |
Definition |
Min. |
Max. |
Units |
|
VB |
High side floating supply voltage |
-0.3 |
625 |
V |
|
VS |
High side floating supply offset voltage |
VB - 25 |
VB + 0.3 | |
|
VHO |
High side floating output voltage |
VS - 0.3 |
VB + 0.3 | |
|
VCC |
Low side fixed supply voltage |
-0.3 |
25 | |
|
VLO |
Low side output voltage |
-0.3 |
VCC + 0.3 | |
|
VIN |
Logic input voltage(HIN & LIN) |
-0.3 |
VCC + 0.3 | |
|
VSS |
Logic ground (IR21064 only) | VCC - 25 | VCC + 0.3 | |
|
dVs/dt |
Allowable offset supply voltage transient |
- |
50 |
V/ns |
|
PD
|
Package power dissipation @ TA +25°C (8 lead PDIP) |
- |
1.0 |
W |
|
(8 lead SOIC) |
- |
0.625 | ||
|
(14 lead PDIP) |
- |
1.6 | ||
|
(14 lead SOIC) |
- |
1.0 | ||
|
RTHJA
|
Thermal resistance, junction to ambient (8 lead PDIP) |
- |
125 |
°C/W |
|
(8 lead SOIC) |
- |
200 | ||
|
(14 lead PDIP) |
- |
75 | ||
|
(14 lead SOIC) |
- |
120 | ||
|
TJ |
Junction temperature |
- |
150 |
°C |
|
TS |
Storage temperature |
-55 |
150 | |
|
TL |
Lead temperature (soldering, 10 seconds) |
- |
300 |
IR2108(4)(S) Features
• Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune
• Gate drive supply range from 10 to 20V
• Undervoltage lockout for both channels
• 3.3V, 5V and 15V input logic compatible
• Cross-conduction prevention logic
• Matched propagation delay for both channels
• High side output in phase with HIN input
• Low side output out of phase with LIN input
• Logic and power ground +/- 5V offset.
• Internal 540ns dead-time, and programmable up to 5us with one external RDT resistor (IR21084)
• Lower di/dt gate driver for better noise immunity
• Gate drive supply range from 10 to 20V
• Undervoltage lockout for both channels
• 3.3V, 5V and 15V input logic compatible
• Cross-conduction prevention logic
• Matched propagation delay for both channels
• High side output in phase with HIN input
• Low side output out of phase with LIN input
• Logic and power ground +/- 5V offset.
• Internal 540ns dead-time, and programmable up to 5us with one external RDT resistor (IR21084)
• Lower di/dt gate driver for better noise immunity
IR2108(4)(S) Connection Diagram
IR2010
PDF/DataSheet Download
- Datasheet: IR2010
- File Size: 232500 KB
- Manufacturer: IRF [International Rectifier]
- Click here to Download
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