MFG:Other Category:Other
Category: Other
MFG: Other
Description: The IR2108(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced o...
The IR2108(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Pro-prietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input of tthe IR2108(4)(S) is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.
|
Symbol |
Definition |
Min. |
Max. |
Units |
|
VB |
High side floating supply voltage |
-0.3 |
625 |
V |
|
VS |
High side floating supply offset voltage |
VB - 25 |
VB + 0.3 | |
|
VHO |
High side floating output voltage |
VS - 0.3 |
VB + 0.3 | |
|
VCC |
Low side fixed supply voltage |
-0.3 |
25 | |
|
VLO |
Low side output voltage |
-0.3 |
VCC + 0.3 | |
|
VIN |
Logic input voltage(HIN & LIN) |
-0.3 |
VCC + 0.3 | |
|
VSS |
Logic ground (IR21064 only) | VCC - 25 | VCC + 0.3 | |
|
dVs/dt |
Allowable offset supply voltage transient |
- |
50 |
V/ns |
|
PD
|
Package power dissipation @ TA +25°C (8 lead PDIP) |
- |
1.0 |
W |
|
(8 lead SOIC) |
- |
0.625 | ||
|
(14 lead PDIP) |
- |
1.6 | ||
|
(14 lead SOIC) |
- |
1.0 | ||
|
RTHJA
|
Thermal resistance, junction to ambient (8 lead PDIP) |
- |
125 |
°C/W |
|
(8 lead SOIC) |
- |
200 | ||
|
(14 lead PDIP) |
- |
75 | ||
|
(14 lead SOIC) |
- |
120 | ||
|
TJ |
Junction temperature |
- |
150 |
°C |
|
TS |
Storage temperature |
-55 |
150 | |
|
TL |
Lead temperature (soldering, 10 seconds) |
- |
300 |
IR2010
PDF/DataSheet Download
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