IR2111

Series: -
Type: -
On-State Resistance: -
Current - Output / Channel: -
Current - Peak Output: -
Number of Outputs: 2
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
Number of Configurations: 1
Operating Temperature: -40°C ~ 125°C
Input Type: Non-Inverting
Configuration: High and Low Side, Synchronous
Supplier Device Package: 8-DIP
High Side Voltage - Max (Bootstrap): 600V
Manufacturer: International Rectifier
Voltage - Supply: 10 V ~ 20 V
Current - Peak: 250mA
Delay Time: 750ns


Features:

·Floating channel designed for bootstrap operation
   Fully operational to +600V
   Tolerant to negative transient voltage dV/dt immune
· Gate drive supply range from 10 to 20V
· Undervoltage lockout for both channels
· CMOS Schmitt-triggered inputs with pull-down
· Matched propagation delay for both channels
· Internally set deadtime
· High side output in phase with input


Specifications

Symbol	Definition		Min.	Max.	Units
VB	High side floating supply voltage		-0.3	625	V
VS	High side floating supply offset voltage		VB - 25	VB + 0.3
VHO	High side floating output voltage		VS - 0.3	VB + 0.3
VCC	Low side and logic fixed supply voltage		-0.3	25
VLO	Low side output voltage		-0.3	VCC + 0.3
VIN	Logic input voltage		-0.3	VCC + 0.3
dVS/dt	Allowable offset supply voltage transient(Figure 2)		-	50	V/ns
PD	Package power dissipation @ TA +25	(8 Lead DIP)	-	1.0	W
		(8 Lead SOIC)	-	0.625
RJA	Thermal resistance, junction to ambient	(8 Lead DIP)	-	125	/W
		(8 Lead SOIC)	-	200
TJ	Junction temperature		-	150
TS	Storage temperature		-55	150
TL	Lead temperature (soldering, 10 seconds)		-	300

Description

The IR2111 is a high voltage, high speed power MOSFET and IGBT driver with dependent high and low side referenced output channels designed for half-bridge applications. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic input is compatible with standard CMOS outputs. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Internal deadtime is provided to avoid shoot-through in the output half-bridge. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.

Parameters:

Technical/Catalog Information	IR2111
Vendor	International Rectifier
Category	Integrated Circuits (ICs)
Configuration	High and Low Side, Synchronous
Voltage - Supply	10 V ~ 20 V
Current - Peak	250mA
Delay Time	750ns
Package / Case	8-DIP (300 mil)
Packaging	Tube
Number of Outputs	2
Input Type	Non-Inverting
Number of Configurations	1
Operating Temperature	-40°C ~ 125°C
High Side Voltage - Max (Bootstrap)	600V
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IR2111 IR2111