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IR2113E6

Features: Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V Undervoltage lockout for both channels Separate logic supply range from 5 to 20V Logic and power ground ±5V offset CMOS ...

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IR2113E6: Features: Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V Undervoltage lockout...

IR2113E6 Data Sheet

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Part Number:
IR2113E6
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune
Gate drive supply range from 10 to 20V
Undervoltage lockout for both channels
Separate logic supply range from 5 to 20V Logic and power ground ±5V offset
CMOS Schmitt-triggered inputs with pull-down
Cycle by cycle edge-triggered shutdown logic
Matched propagation delay for both channels
Outputs in phase with inputs




Specifications

Symbol
 Parameter
Min.
Max.
Units
VB
 High Side Floating Supply Absolute Voltage
0.5
VS + 20
V
VS
 High Side Floating Supply Offset Voltage
-
600
VHO
 High Side Output Voltage
VS -0.5
VB + 0.5
VCC
 Low Side Fixed Supply Voltage
-0.5
20
VLO
 Low Side Output Voltage
-0.5
VCC + 0.5
VDD
 Logic Supply Voltage
-0.5
VSS + 20
VSS
 Logic Supply Offset Voltage
VCC - 20
VCC + 0.5
VIN
 Logic Input Voltage (HIN, LIN & SD)
VSS - 0.5
VDD + 0.5
dVS/dt
 Allowable Offset Supply Voltage Transient (Fig. 16)
-
50
V/ns
PD
 Package Power Dissipation @ TA = 25°C (Fig. 19)
-
1.6
W
RthJA
 Thermal Resistance, Junction to Ambient
-
125
°C/W
Tj
 Junction Temperature
-55
125
°C
TS
 Storage Temperature
-55
150
TL
 Package Mounting Surface Temperature
300 (for 5 seconds)
 Weight
0.45 (typical)
g





Description

The IR2113E6 is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side refer-enced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construc-tion. Logic inputs are compatible with standard CMOS or LSTTL outputs. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-con-duction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.






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