MFG:IR Package Cooled:MO-036AB D/C:00+
MFG: IR
Package Cooled: MO-036AB
D/C: 00+
Description: The IR2113L6 is a high voltage, high speed power MOSFET and IGBT driver with independent high an...
The IR2113L6 is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side refer-enced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construc-tion. Logic inputs are compatible with standard CMOS or LSTTL outputs. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-con-duction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.
|
Symbol |
Parameter |
Min. |
Max. |
Units |
|
VB |
High Side Floating Supply Absolute Voltage |
0.5 |
VS + 20 |
V |
|
VS |
High Side Floating Supply Offset Voltage |
- |
600 | |
|
VHO |
High Side Output Voltage |
VS -0.5 |
VB + 0.5 | |
|
VCC |
Low Side Fixed Supply Voltage |
-0.5 |
20 | |
|
VLO |
Low Side Output Voltage |
-0.5 |
VCC + 0.5 | |
|
VDD |
Logic Supply Voltage |
-0.5 |
VSS + 20 | |
|
VSS |
Logic Supply Offset Voltage |
VCC - 20 |
VCC + 0.5 | |
|
VIN |
Logic Input Voltage (HIN, LIN & SD) |
VSS - 0.5 |
VDD + 0.5 | |
|
dVS/dt |
Allowable Offset Supply Voltage Transient (Fig. 16) |
- |
50 |
V/ns |
|
PD |
Package Power Dissipation @ TA = 25°C (Fig. 19) |
- |
1.6 |
W |
|
RthJA |
Thermal Resistance, Junction to Ambient |
- |
75 |
°C/W |
|
Tj |
Junction Temperature |
-55 |
125 |
°C |
|
TS |
Storage Temperature |
-55 |
150 | |
|
TL |
Package Mounting Surface Temperature |
- |
300 | |
| Weight |
1.5 (typical) |
g | ||
IR2113L6
PDF/DataSheet Download
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