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Part Number: IR2113 (S)
Description: The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent hi...
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IR2113 (S)
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DataSheet
General Description
IR2113 (S) General Description
The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable rugge-dized monolithic construction. Logic inputs are com-patible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse cur-rent buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 500 or 600 volts.
IR2113 (S) Maximum Ratings
|
Symbol |
Definition |
Min. |
Max. |
Units |
|
VB |
High side floating supply voltage |
-0.3 |
525 |
V |
|
-0.3 |
625 | |||
|
VS |
High side floating supply offset voltage |
VB - 25 |
VB + 0.3 | |
|
VHO |
High side floating output voltage |
VS - 0.3 |
VB + 0.3 | |
|
VCC |
Low side fixed supply voltage |
-0.3 |
25 | |
|
VLO |
Low side output voltage |
-0.3 |
VCC + 0.3 | |
|
VDD |
Logic supply voltage |
-0.3 |
VSS + 25 | |
|
VSS |
Logic supply offset voltage |
VCC - 25 |
VCC + 0.3 | |
|
VIN |
Logic input voltage |
VSS - 0.3 |
VDD + 0.3 | |
|
dVs/dt |
Allowable offset supply voltage transient |
- |
50 |
V/ns |
|
PD |
Package power dissipation @ TA +25°C (14 lead DIP) |
- |
1.6 |
W |
|
(16 lead SOIC) |
- |
1.25 | ||
|
RTHJA |
Thermal resistance, junction to ambient (14 lead DIP) |
- |
75 |
°C/W |
|
(16 lead SOIC) |
- |
100 | ||
|
TJ |
Junction temperature |
- |
150 |
°C |
|
TS |
Storage temperature |
-55 |
150 | |
|
TL |
Lead temperature (soldering, 10 seconds) |
- |
300 |
IR2113 (S) Features
Floating channel designed for bootstrap operation Fully operational to +500V or +600V Tolerant to negative transient voltage dV/dt immune
Gate drive supply range from 10 to 20V
Undervoltage lockout for both channels
3.3V logic compatible Separate logic supply range from 3.3V to 20V Logic and power ground ±5V offset
CMOS Schmitt-triggered inputs with pull-down
Cycle by cycle edge-triggered shutdown logic
Matched propagation delay for both channels
Outputs in phase with inputs
Gate drive supply range from 10 to 20V
Undervoltage lockout for both channels
3.3V logic compatible Separate logic supply range from 3.3V to 20V Logic and power ground ±5V offset
CMOS Schmitt-triggered inputs with pull-down
Cycle by cycle edge-triggered shutdown logic
Matched propagation delay for both channels
Outputs in phase with inputs
IR2113 (S) Connection Diagram
IR2113 (S)
PDF/DataSheet Download
- Datasheet: IR2113 (S)
- File Size: 149064 KB
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