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IR2113 (S)

Features: Floating channel designed for bootstrap operation Fully operational to +500V or +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V Undervoltage lockout for both channels 3.3V logic compatible Separate logic supply range from 3.3V to 20V Logic...

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IR2113 (S): Features: Floating channel designed for bootstrap operation Fully operational to +500V or +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V Undervoltag...

IR2113 (S) Data Sheet

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Part Number:
IR2113 (S)
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

 Floating channel designed for bootstrap operation Fully operational to +500V or +600V Tolerant to negative transient voltage dV/dt immune
Gate drive supply range from 10 to 20V
Undervoltage lockout for both channels
3.3V logic compatible Separate logic supply range from  3.3V to 20V Logic and power ground ±5V offset
CMOS Schmitt-triggered inputs with pull-down
Cycle by cycle edge-triggered shutdown logic
Matched propagation delay for both channels
Outputs in phase with inputs


Pinout

Connection Diagram


Specifications

Symbol
 Definition
Min.
Max.
Units
VB
 High side floating supply voltage
-0.3
525
V
 
-0.3
625
VS
 High side floating supply offset voltage
VB - 25
VB + 0.3
VHO
 High side floating output voltage
VS - 0.3
VB + 0.3
VCC
 Low side fixed supply voltage
-0.3
25
VLO
 Low side output voltage
-0.3
VCC + 0.3

VDD

 Logic supply voltage
-0.3
VSS + 25

VSS

 Logic supply offset voltage
VCC - 25
VCC + 0.3
VIN
 Logic input voltage
VSS - 0.3
VDD + 0.3
dVs/dt
 Allowable offset supply voltage transient
-
50
V/ns
PD

Package power dissipation @ TA +25°C           (14 lead DIP)
-
1.6
W

(16 lead SOIC)

-
1.25
RTHJA
Thermal resistance, junction to ambient      (14 lead DIP)
-
75
°C/W

(16 lead SOIC)

-
100
TJ
 Junction temperature
-
150
°C
TS
 Storage temperature
-55
150
TL
 Lead temperature (soldering, 10 seconds)
-
300



Description

The  IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels.  Proprietary HVIC and latch immune CMOS technologies enable rugge-dized monolithic construction.  Logic inputs are com-patible with standard CMOS or LSTTL output, down to 3.3V logic.  The output drivers feature a high pulse cur-rent buffer stage designed for minimum driver cross-conduction.  Propagation delays are matched to simplify use in high frequency applications.  The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 500 or 600 volts.




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