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MFG:IR Package Cooled:DIP-8
Part Number: IR2117
MFG: IR
Package Cooled: DIP-8
Description: The IR2117 is a high voltage, high speed power MOSFET and IGBT driver. Proprietary HVIC and latch immu...
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IR2117
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DataSheet
General Description
IR2117 General Description
The IR2117 is a high voltage, high speed power MOSFET and IGBT driver. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS outputs. The output driver features a high pulse current buffer stage designed for minimum cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high or low side configuration which operates up to 600 volts.
IR2117 Maximum Ratings
| Parameter | Value | Units | |||
| Symbol | Definition | Min. | Max. | ||
| VB | High Side Floating Supply Voltage | -0.3 | 625 | V | |
| VS | High Side Floating Supply Offset Voltage | VB - 25 | VB + 0.3 | ||
| VHO | High Side Floating Output Voltage | VS - 0.3 | VB + 0.3 | ||
| VCC | Logic Supply Voltage | -0.3 | 25 | ||
| VIN | Logic Input Voltage | -0.3 | VCC + 0.3 | ||
| dVs/dt | Allowable Offset Supply Voltage Transient (Figure 2) | - | 50 | V/ns | |
| PD | Package Power Dissipation @ TA +25 | (8 Lead DIP) | - | 1.0 | V/ns |
| (8 Lead SOIC) | - | 0.625 | |||
| RJA | Thermal Resistance, Junction to Ambient | (8 Lead DIP) | - | 125 | /W |
| (8 Lead SOIC) | - | 200 | |||
| TJ | Junction Temperature | - | 150 | ||
| TS |
Storage Temperature | -55 | 150 | ||
| TL | Lead Temperature (Soldering, 10 seconds) | - | 300 | ||
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM. The Thermal Resistance and Power Dissipation ratings are measured under board mounted and still air conditions. Additional information is shown in Figures 5 through 8.
IR2117 Features
·Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune
·Gate drive supply range from 10 to 20V
·Undervoltage lockout
·CMOS Schmitt-triggered inputs with pull-down
·Output in phase with input
·Gate drive supply range from 10 to 20V
·Undervoltage lockout
·CMOS Schmitt-triggered inputs with pull-down
·Output in phase with input
IR2117 Connection Diagram
IR2117
PDF/DataSheet Download
- Datasheet: IR2117
- File Size: 272990 KB
- Manufacturer: IRF [International Rectifier]
- Click here to Download
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