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Description: The IR2122(S) is a high voltage, high speed power MOSFET and IGBT driver. Proprietary HVIC and latch i...


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IR2122S General Description


The IR2122(S) is a high voltage, high speed power MOSFET and IGBT driver. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL outputs, down to 3.3V. The protection circuity detects over-current in the driven power transistor and terminates the gate drive voltage. An open drain FAULT signal is provided to indicate that an over-current shutdown has occurred. The output driver features a high pulse current buffer stage designed for minimum cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side or low side configuration which operates up to 600 volts.

IR2122S Maximum Ratings

Symbol Definition Min. Max. Units
VB High Side Floating Supply Voltage -0.3 625 V
VS High Side Floating Offset Voltage VB - 25 VB + 0.3
VHO High Side Floating Output Voltage VS - 0.3 VB + 0.3
VCC Logic Supply Voltage -0.3 25
VIN Logic Input Voltage -0.3 VCC + 0.3
VFLT FAULT Output Voltage -0.3 VCC + 0.3
VCS Current Sense Voltage VS - 0.3 VB + 0.3
dVs/dt Allowable Offset Supply Voltage Transient - 50 V/ns
PD Package Power Dissipation @ TA +25 (8 Lead DIP) - 1.0 W
(8 Lead SOIC) - 0.625
RTHJA Thermal Resistance, Junction to Ambient (8 Lead DIP) - 125 /W
(8 Lead SOIC) - 200
TJ Junction Temperature - 150
TS Storage Temperature -55 150
TL Lead Temperature (Soldering, 10 seconds) - 300

IR2122S Features

• Floating channel designed for bootstrap operation
   Fully operational to +600V
   Tolerant to negative transient voltage
   dV/dt immune
• Gate drive supply range from 10 to 20V
• Undervoltage lockout
• 3.3V, 5V and 15V input logic compatible
• FAULT lead indicates shutdown has occured
• Output out of phase with input

IR2122S Connection Diagram

IR2122S  Connection Diagram

IR2122S datasheet

IR2122S
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