IR2130J

The IR2130J is designed as one kind of high voltage, high speed power MOSFET and IGBT driver with three independent high and low side referenced output channels.With the help of Proprietary HVIC technology,it ruggedized monolithic construction.The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use at high frequencies. The floating channels can be used to drive N-channel power MOSFETs or IGBTs in the high side configuration which operate up to 600 volts.

Features of the IR2130J are:(1)gate drive supply range from 10 to 20V;(2)undervoltage lockout for all channels;(3)over-current shutdown turns off all six drivers;(4)independent half-bridge drivers;(5)matched propagation delay for all channels;(6)2.5V logic compatible;(7)outputs out of phase with inputs;(8)cross-conduction prevention logic;(9)also available LEAD-FREE.

The absolute maximum ratings of the IR2130J can be summarized as:(1)high side floating supply voltage:-0.3 to 625;(2)high side floating offset voltage: VB1,2,3-25 to VB1,2,3+0.3;(3)high side floating output voltage:VS1,2,3-0.3 to VB1,2,3+0.3;(4)low side and logic fixed supply voltage:-0.3 to 25;(5)logic ground:VCC-25 to VCC+0.3;(6)low side output voltage:-0.3 to VCC+0.3;(7)lead temperature (soldering, 10 seconds):300°C;(8)storage temperature:-55 to 150°C;(9)junction temperature:150°C;(10)allowable offset supply voltage transient:50 V/ns.If you want to know more information such as the electrical characteristics about the IR2130J,please download the datasheet in www.seekic.com or www.chinaicmart.com .