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MFG:IR  Package Cooled:DIP  D/C:1035  

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Part Number: IR21531D

 

MFG: IR

Package Cooled: DIP

D/C: 1035

Description: The IR21531(D)(S) are an improved version of the popular IR2155 and IR2151 gate driver ICs, and incorp...


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IR21531D General Description


The IR21531(D)(S) are an improved version of the popular IR2155 and IR2151 gate driver ICs, and incorporates a high voltage half-bridge gate driver with a front end oscillator similar to the industry standard CMOS 555 timer. The IR21531 provides more functionality and is easier to use than previous ICs. A shutdown feature has been designed into the CT pin, so that both gate driver outputs can be disabled using a low voltage control signal. In addition, the gate driver output pulse widths are the same once the rising undervoltage lockout threshold on VCC has been reached, resulting in a more stable profile of frequency vs time at startup. Noise immunity has been improved significantly, both by lowering the peak di/dt of the gate drivers, and by increasing the undervoltage lockout hysteresis to 1V. Finally, special attention has been payed to maximizing the latch immunity of the device, and providing comprehensive ESD protection on all pins.

IR21531D Maximum Ratings

Symbol Definition Min. Max. Units
VB High Side Floating Supply Voltage -0.3 625 V
VS High Side Floating Supply Offset Voltage VB - 25 VB + 0.3
VHO High Side Floating Output Voltage VS - 0.3 VB + 0.3
VLO Low Side Output Voltage -0.3 VCC + 0.3
VRT RT Voltage -0.3 VCC + 0.3
VCT CT Voltage -0.3 VCC + 0.3
ICC Supply Current (Note 1) - 25 mA
IRT RT Output Current -5 5
dVs/dt Allowable Offset Supply Voltage Transient - 50 V/ns
PD Package Power Dissipation @ TA +25°C (8 Lead DIP) - 1.0 W
(8 Lead SOIC) - 0.625
RJA Thermal Resistance, Junction to Ambient (8 Lead DIP) - 125 /W
(8 Lead SOIC) - 200
TJ Junction Temperature -55 150
TS Storage Temperature -55 150
TL Lead Temperature (Soldering, 10 seconds) - 300

IR21531D Features

• Integrated 600V half-bridge gate driver
• 15.6V zener clamp on Vcc
• True micropower start up
• Tighter initial deadtime control
• Low temperature coefficient deadtime
• Shutdown feature (1/6th Vcc) on CT pin
• Increased undervoltage lockout Hysteresis (1V)
• Lower power level-shifting circuit
• Constant LO, HO pulse widths at startup
• Lower di/dt gate driver for better noise immunity
• Low side output in phase with RT
• Internal 50nsec (typ.) bootstrap diode (IR21531D)
• Excellent latch immunity on all inputs and outputs
• ESD protection on all leads
• Also available LEAD_FREE

IR21531D Connection Diagram

IR21531D  Connection Diagram

IR21531D datasheet

IR21531D
PDF/DataSheet Download

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