Features: • 600V Half Bridge Driver• Integrated Bootstrap FET• Adaptive zero-voltage switching (ZVS)• Internal Crest Factor Over-Current Protection• 0 to 6VDC Voltage Controlled Oscillator• Programmable minimum frequency• Micropower Startup Current (80uA)&...
IR2520DS: Features: • 600V Half Bridge Driver• Integrated Bootstrap FET• Adaptive zero-voltage switching (ZVS)• Internal Crest Factor Over-Current Protection• 0 to 6VDC Voltage C...
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Features: Junction Size :Square 250 mils Wafer Size : 4 VRRM/ VDRM Class : 600 to 1200 V Passiva...
Features: Junction Size: Square 250 mils Wafer Size: 4 VRRM Class: 1200 V Passivation Process: G...

| Symbol | Definition | Min. | Max. | Units | |
| VB | High side floating supply voltage | -0.3 | 625 | V | |
| VS | High side floating supply offset voltage | VB - 25 | VB + 0.3 | ||
| VHO | High side floating output voltage | VS - 0.3 | VB + 0.3 | ||
| VLO | Low side output voltage | -0.3 | VCC + 0.3 | ||
| IVCO | Voltage controlled oscillator input current (Note 1) | -5 | + 5 | mA | |
| ICC | Supply current (Note 2) | -25 | 25 | mA | |
| dVS/dt | Allowable offset voltage slew rate | -50 | 50 | V/ns | |
| PD | Package power dissipation @ TA +25 PD=(TJMAX-TA)RthJA |
8-Lead PDIP | - | 1 | W |
| 8-Lead SOIC | - | 0.625 | |||
| RthJA | Thermal resistance, junction to ambient | 8-Lead PDIP | - | 125 | /W |
| 8-Lead SOIC | - | 200 | |||
| TJ | Junction temperature | -55 | 150 | ||
| TS | Storage temperature | -55 | 150 | ||
| TL | Lead temperature (soldering, 10 seconds) | - | 300 | ||
The IR2520DS is a complete adaptive ballast controller and 600V half-bridge driver integrated into a single IC for fluorescent lighting applications. The IC includes adaptive zero-voltage switching (ZVS), internal crest factor over-current protection, as well as an integrated bootstrap FET. The heart of this IC is a voltage controlled oscillator with externally programmable minimum frequency. All of the necessary ballast features are integrated in a small 8-pin DIP or SOIC package.